STP36NF06

STMicroelectronics STP36NF06

Part Number:
STP36NF06
Manufacturer:
STMicroelectronics
Ventron No:
3586505-STP36NF06
Description:
MOSFET N-CH 60V 30A TO-220
ECAD Model:
Datasheet:
STP36NF06

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Specifications
STMicroelectronics STP36NF06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP36NF06.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    40mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    30A
  • Base Part Number
    STP36N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    690pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • Rise Time
    40ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    30A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP36NF06 Description
The STMicroelectronics STP36NF06 Power MOSFET is the latest development of STMicroelectronic's unique \"Single Feature Size? II\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP36NF06 Features
Exceptional dv/dt capability
Application-oriented characterization
100% avalanche tested

STP36NF06 Applications
Switching applications

STP36NF06 More Descriptions
N-channel 60 V, 0.032 Ohm typ., 30 A STripFET(TM) II Power MOSFET in TO-220 package
N-Channel 60 V 0.04 O Flange Mount STripFET™ II Power MosFet - TO-220
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(3 Tab) TO-220 Tube
MOSFET Operating temperature: -55... 175 °C Housing type: TO-220 Polarity: N Power dissipation: 70 W
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 70W
Product Comparison
The three parts on the right have similar specifications to STP36NF06.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    View Compare
  • STP36NF06
    STP36NF06
    Through Hole
    Through Hole
    TO-220-3
    3
    4.535924g
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ II
    e3
    yes
    Obsolete
    Not Applicable
    3
    EAR99
    40mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    30A
    STP36N
    3
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    40m Ω @ 15A, 10V
    4V @ 250μA
    690pF @ 25V
    30A Tc
    31nC @ 10V
    40ns
    10V
    ±20V
    9 ns
    27 ns
    30A
    4V
    TO-220AB
    20V
    60V
    200 mJ
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • STP30NF20
    -
    -
    TO220
    -
    -
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • STP30N10F7
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    STripFET™
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    STP30N
    -
    -
    50W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    24m Ω @ 16A, 10V
    4.5V @ 250μA
    1270pF @ 50V
    32A Tc
    19nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 7 months ago)
    37 Weeks
    NOT SPECIFIED
    NOT SPECIFIED
    100V
    -
    -
  • STP3N62K3
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    150°C TJ
    Tube
    SuperMESH3™
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    2.5Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP3N
    3
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    -
    9 ns
    N-Channel
    SWITCHING
    2.5 Ω @ 1.4A, 10V
    4.5V @ 50μA
    385pF @ 25V
    2.7A Tc
    13nC @ 10V
    6.8ns
    10V
    ±30V
    15.6 ns
    22 ns
    2.7A
    -
    TO-220AB
    30V
    620V
    100 mJ
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    10.8A
    3.75 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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