STMicroelectronics STP36NF06
- Part Number:
- STP36NF06
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3586505-STP36NF06
- Description:
- MOSFET N-CH 60V 30A TO-220
- Datasheet:
- STP36NF06
STMicroelectronics STP36NF06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP36NF06.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- ECCN CodeEAR99
- Resistance40mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating30A
- Base Part NumberSTP36N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time40ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)30A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Avalanche Energy Rating (Eas)200 mJ
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP36NF06 Description
The STMicroelectronics STP36NF06 Power MOSFET is the latest development of STMicroelectronic's unique \"Single Feature Size? II\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP36NF06 Features
Exceptional dv/dt capability
Application-oriented characterization
100% avalanche tested
STP36NF06 Applications
Switching applications
The STMicroelectronics STP36NF06 Power MOSFET is the latest development of STMicroelectronic's unique \"Single Feature Size? II\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP36NF06 Features
Exceptional dv/dt capability
Application-oriented characterization
100% avalanche tested
STP36NF06 Applications
Switching applications
STP36NF06 More Descriptions
N-channel 60 V, 0.032 Ohm typ., 30 A STripFET(TM) II Power MOSFET in TO-220 package
N-Channel 60 V 0.04 O Flange Mount STripFET II Power MosFet - TO-220
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(3 Tab) TO-220 Tube
MOSFET Operating temperature: -55... 175 °C Housing type: TO-220 Polarity: N Power dissipation: 70 W
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 70W
N-Channel 60 V 0.04 O Flange Mount STripFET II Power MosFet - TO-220
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(3 Tab) TO-220 Tube
MOSFET Operating temperature: -55... 175 °C Housing type: TO-220 Polarity: N Power dissipation: 70 W
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 70W
The three parts on the right have similar specifications to STP36NF06.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)Nominal VgsView Compare
-
STP36NF06Through HoleThrough HoleTO-220-334.535924gSILICON-55°C~175°C TJTubeSTripFET™ IIe3yesObsoleteNot Applicable3EAR9940mOhmMatte Tin (Sn)FET General Purpose Power60VMOSFET (Metal Oxide)30ASTP36N3170W TcSingleENHANCEMENT MODE70WDRAIN10 nsN-ChannelSWITCHING40m Ω @ 15A, 10V4V @ 250μA690pF @ 25V30A Tc31nC @ 10V40ns10V±20V9 ns27 ns30A4VTO-220AB20V60V200 mJ9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------
-
--TO220----Tube-packed---------------------------------------------RoHS Compliant--------
-
-Through HoleTO-220-3----55°C~175°C TJTubeSTripFET™--Active1 (Unlimited)-EAR99----MOSFET (Metal Oxide)-STP30N--50W Tc-----N-Channel-24m Ω @ 16A, 10V4.5V @ 250μA1270pF @ 50V32A Tc19nC @ 10V-10V±20V-------------ROHS3 CompliantLead FreeACTIVE (Last Updated: 7 months ago)37 WeeksNOT SPECIFIEDNOT SPECIFIED100V--
-
Through HoleThrough HoleTO-220-33-SILICON150°C TJTubeSuperMESH3™e3yesObsolete1 (Unlimited)3EAR992.5OhmMatte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STP3N3145W TcSingleENHANCEMENT MODE45W-9 nsN-ChannelSWITCHING2.5 Ω @ 1.4A, 10V4.5V @ 50μA385pF @ 25V2.7A Tc13nC @ 10V6.8ns10V±30V15.6 ns22 ns2.7A-TO-220AB30V620V100 mJ15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-----10.8A3.75 V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
25 September 2023
A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors
Ⅰ. What is a MOS field effect transistor?Ⅱ. Overview of 2N7000Ⅲ. Overview of BS170Ⅳ. 2N7000 vs BS170: PCB footprintsⅤ. 2N7000 vs BS170: Technical parametersⅥ. 2N7000 vs BS170: FeaturesⅦ.... -
26 September 2023
W25Q128JVSIQ Footprint, Features and Package
Ⅰ. W25Q128JVSIQ descriptionⅡ. W25Q128JVSIQ symbol and footprintⅢ. Technical parametersⅣ. Features of W25Q128JVSIQⅤ. Pin configuration of W25Q128JVSIQⅥ. Package of W25Q128JVSIQⅦ. What are the characteristics of the SPI interface of... -
26 September 2023
TDA7560 Audio Power Amplifier: Symbol, Features and Application
Ⅰ. Overview of TDA7560Ⅱ. Pin connection, symbol and footprint of TDA7560Ⅲ. Technical parametersⅣ. Features of TDA7560Ⅴ. Application of TDA7560Ⅵ. Are TDA7560 and TDA7851 interchangeable?Ⅶ. TDA7560 car power amplifier... -
27 September 2023
BC640 PNP Transistor: Features, Package and Other Details
Ⅰ. Overview of BC640Ⅱ. Symbol and footprint of BC640Ⅲ. Technical parametersⅣ. Features of BC640Ⅴ. Pinout and package of BC640Ⅵ. Application of BC640Ⅶ. How to optimize the performance of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.