STMicroelectronics STP30NF20

Name: STP30NF20
Brand: STMicroelectronics
SKU: 3070366-STP30NF20
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP30NF20

Manufacturer:: STMicroelectronics

Ventron No:: 3070366-STP30NF20

Description:: MOSFET N-CH 200V 30A TO-220

ECAD Model:

Datasheet:: STP30NF20

Specifications

STMicroelectronics STP30NF20 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP30NF20.

Package / Case
TO220
Packaging
Tube-packed
RoHS Status
RoHS Compliant

Description

STP30NF20 Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet STP30NF20 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of STP30NF20. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

STP30NF20 More Descriptions

N-channel 200 V, 0.065 Ohm, 30 A, TO-220 STripFET(TM) Power MOSFET
Trans MOSFET N-CH 200V 30A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:30A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220 (SOT-78B); Termination Type:Through Hole; Current, Idm Pulse:120A; No. of Pins:3; Power Dissipation:125W; Resistance, Rds on @ Vgs = 10V:0.075ohm; SMD Marking:30NF20; Voltage, Rds Measurement:10V; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to STP30NF20.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Factory Lead Time

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

Lead Free

JESD-609 Code

Resistance

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Rise Time

Fall Time (Typ)

Avalanche Energy Rating (Eas)

Pbfree Code

Pulsed Drain Current-Max (IDM)

Nominal Vgs

REACH SVHC

View Compare
STP30NF20

STMicroelectronics

TO220

Tube-packed

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP36N55M5

STMicroelectronics

TO-220-3

Tube

ROHS3 Compliant

17 Weeks

Through Hole

Through Hole

3

SILICON

150°C TJ

MDmesh™ V

Active

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP36N

1

190W Tc

Single

ENHANCEMENT MODE

190W

DRAIN

56 ns

N-Channel

SWITCHING

80m Ω @ 16.5A, 10V

5V @ 250μA

2670pF @ 100V

33A Tc

62nC @ 10V

10V

±25V

56 ns

33A

TO-220AB

25V

0.08Ohm

550V

15.75mm

10.4mm

4.6mm

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP30NF20 vs STP36N55M5
STP30NM50N

STMicroelectronics

TO-220-3

Tube

ROHS3 Compliant

-

Through Hole

Through Hole

-

SILICON

150°C TJ

MDmesh™ II

Obsolete

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP30N

1

190W Tc

Single

ENHANCEMENT MODE

190W

ISOLATED

-

N-Channel

SWITCHING

115m Ω @ 13.5A, 10V

4V @ 250μA

2740pF @ 50V

27A Tc

94nC @ 10V

10V

±25V

115 ns

27A

TO-220AB

25V

-

500V

-

-

-

-

Lead Free

e3

115mOhm

Tin (Sn)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

20ns

60 ns

900 mJ

-

-

-

-

STP30NF20 vs STP30NM50N
STP3N62K3

STMicroelectronics

TO-220-3

Tube

ROHS3 Compliant

-

Through Hole

Through Hole

3

SILICON

150°C TJ

SuperMESH3™

Obsolete

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP3N

1

45W Tc

Single

ENHANCEMENT MODE

45W

-

9 ns

N-Channel

SWITCHING

2.5 Ω @ 1.4A, 10V

4.5V @ 50μA

385pF @ 25V

2.7A Tc

13nC @ 10V

10V

±30V

22 ns

2.7A

TO-220AB

30V

-

620V

15.75mm

10.4mm

4.6mm

No

Lead Free

e3

2.5Ohm

Matte Tin (Sn)

-

-

-

3

-

-

6.8ns

15.6 ns

100 mJ

yes

10.8A

3.75 V

No SVHC

STP30NF20 vs STP3N62K3