STMicroelectronics STP3N62K3

Name: STP3N62K3
Brand: STMicroelectronics
SKU: 2849548-STP3N62K3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP3N62K3

Manufacturer:: STMicroelectronics

Ventron No:: 2849548-STP3N62K3

Description:: MOSFET N-CH 620V 2.7A TO-220

ECAD Model:

Datasheet:: STP3N62K3

Specifications

STMicroelectronics STP3N62K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP3N62K3.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
SuperMESH3™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
2.5Ohm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP3N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.5 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
385pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.7A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Rise Time
6.8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15.6 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
2.7A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
620V
Pulsed Drain Current-Max (IDM)
10.8A
Avalanche Energy Rating (Eas)
100 mJ
Nominal Vgs
3.75 V
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP3N62K3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 385pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.7A.With a drain-source breakdown voltage of 620V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 620V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Peak drain current for this device is 10.8A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STP3N62K3 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 10.8A.

STP3N62K3 Applications
There are a lot of STMicroelectronics
STP3N62K3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STP3N62K3 More Descriptions

N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in TO-220 package
Trans MOSFET N-CH 620V 2.7A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 2.7A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 45W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STP3N62K3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Case Connection

Voltage - Rated DC

Current Rating

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Lifecycle Status

Factory Lead Time

View Compare
STP3N62K3

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH3™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

2.5Ohm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP3N

3

1

45W Tc

Single

ENHANCEMENT MODE

45W

9 ns

N-Channel

SWITCHING

2.5 Ω @ 1.4A, 10V

4.5V @ 50μA

385pF @ 25V

2.7A Tc

13nC @ 10V

6.8ns

10V

±30V

15.6 ns

22 ns

2.7A

TO-220AB

30V

620V

10.8A

100 mJ

3.75 V

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP30NM50N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

MDmesh™ II

e3

-

Obsolete

1 (Unlimited)

3

EAR99

115mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP30N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

N-Channel

SWITCHING

115m Ω @ 13.5A, 10V

4V @ 250μA

2740pF @ 50V

27A Tc

94nC @ 10V

20ns

10V

±25V

60 ns

115 ns

27A

TO-220AB

25V

500V

-

900 mJ

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

ISOLATED

-

-

-

-

-

-

-

STP3N62K3 vs STP30NM50N
STP3NB100

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

-

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP3N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

N-Channel

SWITCHING

6 Ω @ 1.5A, 10V

4V @ 250μA

700pF @ 25V

3A Tc

30nC @ 10V

12ns

10V

±30V

28 ns

-

3A

TO-220AB

30V

1kV

12A

244 mJ

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

-

1kV

3A

1000V

3A

6Ohm

-

-

STP3N62K3 vs STP3NB100
STP30N10F7

STMicroelectronics

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

STripFET™

-

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

STP30N

-

-

50W Tc

-

-

-

-

N-Channel

-

24m Ω @ 16A, 10V

4.5V @ 250μA

1270pF @ 50V

32A Tc

19nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

-

NOT SPECIFIED

-

-

-

-

-

100V

-

-

ACTIVE (Last Updated: 7 months ago)

37 Weeks

STP3N62K3 vs STP30N10F7