STMicroelectronics STP35N65M5

Name: STP35N65M5
Brand: STMicroelectronics
SKU: 3071016-STP35N65M5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP35N65M5

Manufacturer:: STMicroelectronics

Ventron No:: 3071016-STP35N65M5

Description:: MOSFET N-CH 650V 27A TO-220

ECAD Model:

Datasheet:: STP35N65M5

Specifications

STMicroelectronics STP35N65M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP35N65M5.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ V
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
Resistance
98MOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP35N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Case Connection
ISOLATED
Turn On Delay Time
60 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
98m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3750pF @ 100V
Current - Continuous Drain (Id) @ 25°C
27A Tc
Gate Charge (Qg) (Max) @ Vgs
83nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
27A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
650V
Avalanche Energy Rating (Eas)
800 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

stp35n65m5 Description

stp35n65m5 is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with Microelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

stp35n65m5 Features

Worldwide best RDS(on)* area
Higher VDSS rating
Excellent switching performance
Easy to drive
100% avalanche tested
High dv/dt capability

stp35n65m5 Applications

Power supply
Switching applications

STP35N65M5 More Descriptions

N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-220
Trans MOSFET N-CH Si 650V 27A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 650V, 27A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STP35N65M5.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

ECCN Code

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

View Compare
STP35N65M5

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™ V

e3

Obsolete

Not Applicable

3

98MOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP35N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

ISOLATED

60 ns

N-Channel

SWITCHING

98m Ω @ 13.5A, 10V

5V @ 250μA

3750pF @ 100V

27A Tc

83nC @ 10V

12ns

10V

±25V

16 ns

60 ns

27A

4V

TO-220AB

25V

650V

800 mJ

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP33N65M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

3

-

-

-

MOSFET (Metal Oxide)

STP33N

-

1

190W Tc

Single

ENHANCEMENT MODE

-

DRAIN

13.5 ns

N-Channel

SWITCHING

140m Ω @ 12A, 10V

4V @ 250μA

1790pF @ 100V

24A Tc

41.5nC @ 10V

-

10V

±25V

-

72.5 ns

24A

-

TO-220AB

25V

-

780 mJ

15.75mm

10.4mm

4.6mm

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

EAR99

650V

0.14Ohm

96A

650V

-

-

-

-

-

-

-

-

STP35N65M5 vs STP33N65M2
STP3NB100

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP3N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

-

N-Channel

SWITCHING

6 Ω @ 1.5A, 10V

4V @ 250μA

700pF @ 25V

3A Tc

30nC @ 10V

12ns

10V

±30V

28 ns

-

3A

-

TO-220AB

30V

1kV

244 mJ

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

EAR99

1000V

6Ohm

12A

-

1kV

NOT SPECIFIED

not_compliant

3A

NOT SPECIFIED

R-PSFM-T3

Not Qualified

3A

STP35N65M5 vs STP3NB100
STP30N10F7

STMicroelectronics

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

STripFET™

-

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

STP30N

-

-

50W Tc

-

-

-

-

-

N-Channel

-

24m Ω @ 16A, 10V

4.5V @ 250μA

1270pF @ 50V

32A Tc

19nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

37 Weeks

EAR99

100V

-

-

-

-

NOT SPECIFIED

-

-

NOT SPECIFIED

-

-

-

STP35N65M5 vs STP30N10F7