STMicroelectronics STP36NF06L

Name: STP36NF06L
Brand: STMicroelectronics
SKU: 3070060-STP36NF06L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP36NF06L

Manufacturer:: STMicroelectronics

Ventron No:: 3070060-STP36NF06L

Description:: MOSFET N-CH 60V 30A TO-220

ECAD Model:

Datasheet:: STP36NF06L

Specifications

STMicroelectronics STP36NF06L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP36NF06L.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
32mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
30A
Base Part Number
STP36N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
40m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 5V
Rise Time
80ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±18V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
2.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
18V
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
225 mJ
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP36NF06L Description This Power MOSFET is the latest development of STMicroelectronic's unique “Single Feature Size?”strip-based process. The resulting transistor shows an extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP36NF06L Features Exceptional dv/dt capability 100% avalanche tested Low threshold drive
STP36NF06L Applications Switching application

STP36NF06L More Descriptions

N-CHANNEL 60V - 0.032 Ohm - 30A TO-220 STRIPFET(TM) II MOSFET
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N-Ch, 60V, 30A, 175Deg C, 70W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Stmicroelectronics STP36NF06L
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP36NF06L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Pbfree Code

Nominal Vgs

View Compare
STP36NF06L

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

32mOhm

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

30A

STP36N

3

1

70W Tc

Single

ENHANCEMENT MODE

70W

DRAIN

10 ns

N-Channel

SWITCHING

40m Ω @ 15A, 10V

2.5V @ 250μA

660pF @ 25V

30A Tc

17nC @ 5V

80ns

5V 10V

±18V

13 ns

19 ns

30A

2.5V

TO-220AB

18V

60V

225 mJ

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
STP3NB100

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

3A

STP3N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

-

N-Channel

SWITCHING

6 Ω @ 1.5A, 10V

4V @ 250μA

700pF @ 25V

3A Tc

30nC @ 10V

12ns

10V

±30V

28 ns

-

3A

-

TO-220AB

30V

1kV

244 mJ

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

1000V

3A

6Ohm

12A

-

-

STP36NF06L vs STP3NB100
STP30N10F7

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

37 Weeks

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

STripFET™

-

Active

1 (Unlimited)

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

STP30N

-

-

50W Tc

-

-

-

-

-

N-Channel

-

24m Ω @ 16A, 10V

4.5V @ 250μA

1270pF @ 50V

32A Tc

19nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

-

NOT SPECIFIED

-

-

100V

-

-

-

-

-

STP36NF06L vs STP30N10F7
STP3N62K3

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH3™

e3

Obsolete

1 (Unlimited)

3

EAR99

2.5Ohm

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP3N

3

1

45W Tc

Single

ENHANCEMENT MODE

45W

-

9 ns

N-Channel

SWITCHING

2.5 Ω @ 1.4A, 10V

4.5V @ 50μA

385pF @ 25V

2.7A Tc

13nC @ 10V

6.8ns

10V

±30V

15.6 ns

22 ns

2.7A

-

TO-220AB

30V

620V

100 mJ

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

10.8A

yes

3.75 V

STP36NF06L vs STP3N62K3