STMicroelectronics STP190N55LF3

Name: STP190N55LF3
Brand: STMicroelectronics
SKU: 2479518-STP190N55LF3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP190N55LF3

Manufacturer:: STMicroelectronics

Ventron No:: 2479518-STP190N55LF3

Description:: MOSFET N-CH 55V 120A TO-220

ECAD Model:

Datasheet:: STP190N55LF3

Specifications

STMicroelectronics STP190N55LF3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP190N55LF3.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.7Ohm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP190
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Power Dissipation-Max
312W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
312W
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 5V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±18V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
160 ns
Continuous Drain Current (ID)
120A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
18V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
480A
Avalanche Energy Rating (Eas)
1000 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP190N55LF3 Description
This n-channel enhancement mode Power MOSFET is the most recent improvement to STMicroelectronics' distinctive "single feature size" strip-based process. By reducing the necessary alignment stages, this technique now offers exceptional manufacturing reproducibility. The result is a transistor with robust avalanche properties, low gate charge, and extraordinarily high packing density for low resistance.

STP190N55LF3 Features
Logic level drive
100% avalanche tested

STP190N55LF3 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STP190N55LF3 More Descriptions

N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 55V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP190N55LF3.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Number of Pins

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Additional Feature

Number of Channels

Case Connection

Threshold Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

View Compare
STP190N55LF3

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

STripFET™

e3

Active

1 (Unlimited)

3

EAR99

3.7Ohm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP190

3

R-PSFM-T3

1

312W Tc

Single

ENHANCEMENT MODE

312W

20 ns

N-Channel

SWITCHING

3.7m Ω @ 30A, 10V

2.5V @ 250μA

6200pF @ 25V

120A Tc

80nC @ 5V

40ns

5V 10V

±18V

40 ns

160 ns

120A

TO-220AB

18V

55V

480A

1000 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

3

-

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

-

16A

TO-220AB

20V

250V

64A

600 mJ

-

ROHS3 Compliant

-

3

250V

NOT SPECIFIED

not_compliant

16A

NOT SPECIFIED

Not Qualified

0.28Ohm

-

-

-

-

-

-

-

-

-

STP190N55LF3 vs STP16NS25
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

350mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STP12

3

-

1

35W Tc

Single

ENHANCEMENT MODE

35W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

TO-220AB

30V

500V

48A

400 mJ

No

ROHS3 Compliant

Lead Free

3

500V

-

-

12A

-

-

-

AVALANCHE RATED

1

ISOLATED

4V

150°C

20mm

10.4mm

4.6mm

-

STP190N55LF3 vs STP12NM50FP
STP18NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Active

1 (Unlimited)

3

EAR99

285mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP18N

3

-

1

110W Tc

Single

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

55 ns

13A

TO-220AB

25V

600V

52A

-

No

ROHS3 Compliant

Lead Free

3

-

-

-

-

-

-

-

-

-

-

3V

-

15.75mm

10.4mm

4.6mm

No SVHC

STP190N55LF3 vs STP18NM60N