STMicroelectronics STP180N55F3

Name: STP180N55F3
Brand: STMicroelectronics
SKU: 2488069-STP180N55F3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP180N55F3

Manufacturer:: STMicroelectronics

Ventron No:: 2488069-STP180N55F3

Description:: MOSFET N-CH 55V 120A TO-220

ECAD Model:

Datasheet:: ST(B,P)180N55F3

Specifications

STMicroelectronics STP180N55F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP180N55F3.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.8MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP180
Pin Count
3
Number of Elements
1
Power Dissipation-Max
330W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
330W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
150ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
110 ns
Continuous Drain Current (ID)
60A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
480A
Nominal Vgs
4 V
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTP45N06L Description
NTP45N06L is a 60v N?Channel Power MOSFET. The onsemi NTP45N06L is designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls, and bridge circuits. The operating junction and storage temperature are between -55 and 175℃. The MOSFET NTP45N06L is in the TO-220 package with 125W power dissipation.

NTP45N06L Features
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Pb?Free Packages are Available

NTP45N06L Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits

STP180N55F3 More Descriptions

Trans MOSFET N-CH 55V 120A 3-Pin(3 Tab) TO-220 Tube
N-channel 55V - 2.9mOhm - 120A - D2PAK/TO-220
Power Field-Effect Transistor, 120A I(D), 55V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 55V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 330W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STP180N55F3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

JESD-30 Code

Drain-source On Resistance-Max

Factory Lead Time

Additional Feature

Voltage - Rated DC

Current Rating

Number of Channels

Case Connection

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP180N55F3

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

STripFET™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

3.8MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP180

3

1

330W Tc

Single

ENHANCEMENT MODE

330W

25 ns

N-Channel

SWITCHING

3.8m Ω @ 60A, 10V

4V @ 250μA

6800pF @ 25V

120A Tc

100nC @ 10V

150ns

10V

±20V

50 ns

110 ns

60A

4V

TO-220AB

20V

55V

480A

4 V

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP180NS04ZC

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

-

Not For New Designs

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP180

3

1

330W Tc

Single

ENHANCEMENT MODE

300W

-

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

-

120A

-

TO-220AB

20V

33V

480A

-

-

-

-

-

No

ROHS3 Compliant

-

NRND (Last Updated: 8 months ago)

R-PSFM-T3

0.0042Ohm

-

-

-

-

-

-

-

-

-

-

STP180N55F3 vs STP180NS04ZC
STP12NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

-

Active

1 (Unlimited)

3

-

350mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

500V

48A

-

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

-

-

16 Weeks

AVALANCHE RATED

500V

12A

1

ISOLATED

400 mJ

150°C

-

-

STP180N55F3 vs STP12NM50FP
STP16N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

-

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

-

-

16 Weeks

-

-

-

-

-

-

-

Single

600V

STP180N55F3 vs STP16N60M2