STMicroelectronics STP180N10F3
- Part Number:
- STP180N10F3
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2485685-STP180N10F3
- Description:
- MOSFET N-CH 100V 120A TO220
- Datasheet:
- STP180N10F3
STMicroelectronics STP180N10F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP180N10F3.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ III
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance5.1MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Base Part NumberSTP180
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max315W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation315W
- Turn On Delay Time25.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.1m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6665pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs114.6nC @ 10V
- Rise Time97.1ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)6.9 ns
- Turn-Off Delay Time99.9 ns
- Continuous Drain Current (ID)120A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)480A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP180N10F3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6665pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 99.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 480A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STP180N10F3 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 99.9 ns
based on its rated peak drain current 480A.
STP180N10F3 Applications
There are a lot of STMicroelectronics
STP180N10F3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6665pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 99.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 480A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STP180N10F3 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 99.9 ns
based on its rated peak drain current 480A.
STP180N10F3 Applications
There are a lot of STMicroelectronics
STP180N10F3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
STP180N10F3 More Descriptions
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
Trans MOSFET N-CH 100V 120A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 100V 120A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP180N10F3.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionBase Part NumberPin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeNumber of PinsJESD-609 CodeTerminal FinishVoltage - Rated DCPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusElement ConfigurationDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Threshold VoltageHeightLengthWidthREACH SVHCCase ConnectionView Compare
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STP180N10F3ACTIVE (Last Updated: 7 months ago)12 WeeksTinThrough HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeSTripFET™ IIIActive1 (Unlimited)3EAR995.1MOhmFET General Purpose PowerMOSFET (Metal Oxide)SINGLESTP1803R-PSFM-T31SINGLE WITH BUILT-IN DIODE315W TcENHANCEMENT MODE315W25.6 nsN-ChannelSWITCHING5.1m Ω @ 60A, 10V4V @ 250μA6665pF @ 25V120A Tc114.6nC @ 10V97.1ns10V±20V6.9 ns99.9 ns120ATO-220AB20V100V480ANoROHS3 CompliantLead Free-------------------
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---Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTubeMESH OVERLAY™Obsolete1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)-STP16N3-1-140W TcENHANCEMENT MODE140W-N-ChannelSWITCHING280m Ω @ 8A, 10V4V @ 250μA1270pF @ 25V16A Tc83nC @ 10V26ns10V±20V32 ns-16ATO-220AB20V250V64A-ROHS3 Compliant-3e3Matte Tin (Sn)250VNOT SPECIFIEDnot_compliant16ANOT SPECIFIEDNot QualifiedSingle0.28Ohm600 mJ------
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ACTIVE (Last Updated: 8 months ago)16 Weeks-Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeMDmesh™ IIActive1 (Unlimited)3EAR99285mOhmFET General Purpose PowerMOSFET (Metal Oxide)-STP18N3-1-110W TcENHANCEMENT MODE110W12 nsN-ChannelSWITCHING285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V15ns10V±25V25 ns55 ns13ATO-220AB25V600V52ANoROHS3 CompliantLead Free3--------Single--3V15.75mm10.4mm4.6mmNo SVHC-
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---Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VIObsolete1 (Unlimited)3EAR993.3MOhmFET General Purpose PowerMOSFET (Metal Oxide)-STP1503R-PSFM-T31-110W TcENHANCEMENT MODE110W-N-ChannelSWITCHING3.3m Ω @ 40A, 10V2.5V @ 250μA4040pF @ 25V80A Tc40nC @ 4.5V18ns4.5V 10V±20V46 ns75 ns80ATO-220AB20V30V320A-ROHS3 CompliantLead Free-e3Matte Tin (Sn)-NOT SPECIFIEDnot_compliant-NOT SPECIFIEDNot QualifiedSingle-525 mJ-----DRAIN
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