STP180N10F3

STMicroelectronics STP180N10F3

Part Number:
STP180N10F3
Manufacturer:
STMicroelectronics
Ventron No:
2485685-STP180N10F3
Description:
MOSFET N-CH 100V 120A TO220
ECAD Model:
Datasheet:
STP180N10F3

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Specifications
STMicroelectronics STP180N10F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP180N10F3.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™ III
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    5.1MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Base Part Number
    STP180
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    315W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    315W
  • Turn On Delay Time
    25.6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.1m Ω @ 60A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6665pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    114.6nC @ 10V
  • Rise Time
    97.1ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6.9 ns
  • Turn-Off Delay Time
    99.9 ns
  • Continuous Drain Current (ID)
    120A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    480A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP180N10F3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6665pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 99.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 480A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STP180N10F3 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 99.9 ns
based on its rated peak drain current 480A.


STP180N10F3 Applications
There are a lot of STMicroelectronics
STP180N10F3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
STP180N10F3 More Descriptions
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
Trans MOSFET N-CH 100V 120A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP180N10F3.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Lead Free
    Number of Pins
    JESD-609 Code
    Terminal Finish
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Element Configuration
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Threshold Voltage
    Height
    Length
    Width
    REACH SVHC
    Case Connection
    View Compare
  • STP180N10F3
    STP180N10F3
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ III
    Active
    1 (Unlimited)
    3
    EAR99
    5.1MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    STP180
    3
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    315W Tc
    ENHANCEMENT MODE
    315W
    25.6 ns
    N-Channel
    SWITCHING
    5.1m Ω @ 60A, 10V
    4V @ 250μA
    6665pF @ 25V
    120A Tc
    114.6nC @ 10V
    97.1ns
    10V
    ±20V
    6.9 ns
    99.9 ns
    120A
    TO-220AB
    20V
    100V
    480A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP16NS25
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -65°C~150°C TJ
    Tube
    MESH OVERLAY™
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP16N
    3
    -
    1
    -
    140W Tc
    ENHANCEMENT MODE
    140W
    -
    N-Channel
    SWITCHING
    280m Ω @ 8A, 10V
    4V @ 250μA
    1270pF @ 25V
    16A Tc
    83nC @ 10V
    26ns
    10V
    ±20V
    32 ns
    -
    16A
    TO-220AB
    20V
    250V
    64A
    -
    ROHS3 Compliant
    -
    3
    e3
    Matte Tin (Sn)
    250V
    NOT SPECIFIED
    not_compliant
    16A
    NOT SPECIFIED
    Not Qualified
    Single
    0.28Ohm
    600 mJ
    -
    -
    -
    -
    -
    -
  • STP18NM60N
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    Active
    1 (Unlimited)
    3
    EAR99
    285mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP18N
    3
    -
    1
    -
    110W Tc
    ENHANCEMENT MODE
    110W
    12 ns
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    15ns
    10V
    ±25V
    25 ns
    55 ns
    13A
    TO-220AB
    25V
    600V
    52A
    No
    ROHS3 Compliant
    Lead Free
    3
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    -
    -
    3V
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    -
  • STP150N3LLH6
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    Obsolete
    1 (Unlimited)
    3
    EAR99
    3.3MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP150
    3
    R-PSFM-T3
    1
    -
    110W Tc
    ENHANCEMENT MODE
    110W
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    TO-220AB
    20V
    30V
    320A
    -
    ROHS3 Compliant
    Lead Free
    -
    e3
    Matte Tin (Sn)
    -
    NOT SPECIFIED
    not_compliant
    -
    NOT SPECIFIED
    Not Qualified
    Single
    -
    525 mJ
    -
    -
    -
    -
    -
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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