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STP16NF06L

STMicroelectronics STP16NF06L

Part Number:
STP16NF06L
Manufacturer:
STMicroelectronics
Ventron No:
3070039-STP16NF06L
Description:
MOSFET N-CH 60V 16A TO-220
ECAD Model:
Datasheet:
STP16NF06L

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Specifications
STMicroelectronics STP16NF06L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16NF06L.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    90mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    16A
  • Base Part Number
    STP16N
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    45W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 8A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    345pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 5V
  • Rise Time
    37ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V 5V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    12.5 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    16A
  • Threshold Voltage
    1V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    64A
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP16NF06L Description


STP16NF06L power MOSFET is the most recent technology to develop a unique strip-based process. The resultant transistor exhibits an extremely high density of packing for low on-resistance, robust Avalanche characteristics, and less important alignment, resulting in a reproducibility in manufacturing.


STP16NF06L Features


TYPICAL RDS(on) = 0.07
LOW GATE CHARGE AT 100 °C
EXCEPTIONAL dv/dt CAPABILITY
LOW THRESHOLD DRIVE

STP16NF06L Applications


MOTOR CONTROL, AUDIO AMPLIFIERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
STP16NF06L More Descriptions
N-channel 60 V, 0.07 Ohm typ., 16 A STripFET II Power MOSFET in TO-220 package
Transistor MOSFET N Channel 60 Volt 16 Amp 3 Pin 3 Tab TO-220
N CHANNEL MOSFET, 60V, 16A, TO-220; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:16A;
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W
60V 16A 90m´Î@10V8A 45W 2.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 60V, 16A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP16NF06L
Product Comparison
The three parts on the right have similar specifications to STP16NF06L.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Avalanche Energy Rating (Eas)
    View Compare
  • STP16NF06L
    STP16NF06L
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    4.535924g
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    90mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    16A
    STP16N
    3
    1
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    90m Ω @ 8A, 10V
    2.5V @ 250μA
    345pF @ 25V
    16A Tc
    10nC @ 5V
    37ns
    10V 5V
    ±16V
    12.5 ns
    20 ns
    16A
    1V
    TO-220AB
    16V
    60V
    64A
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP16NK60Z
    STP16NK60Z
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    38Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    14A
    STP16N
    3
    1
    -
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    -
    30 ns
    N-Channel
    SWITCHING
    420m Ω @ 7A, 10V
    4.5V @ 50μA
    2650pF @ 25V
    14A Tc
    86nC @ 10V
    25ns
    10V
    ±30V
    15 ns
    70 ns
    14A
    3.75V
    TO-220AB
    30V
    600V
    56A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    yes
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STP16NF06L vs STP16NK60Z
  • STP11NM60FD
    STP11NM60FD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -
    Tube
    FDmesh™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    11A
    STP11N
    3
    1
    -
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    -
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    600V
    44A
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    150°C
    -65°C
    AVALANCHE RATED
    -
    -
    -
    -
    -
    -
    STP16NF06L vs STP11NM60FD
  • STP150N3LLH6
    STP150N3LLH6
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    3.3MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP150
    3
    1
    -
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    -
    TO-220AB
    20V
    30V
    320A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    525 mJ
    STP16NF06L vs STP150N3LLH6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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