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STP160N4LF6

STMicroelectronics STP160N4LF6

Part Number:
STP160N4LF6
Manufacturer:
STMicroelectronics
Ventron No:
2482894-STP160N4LF6
Description:
MOSFET N-CH 40V 120A TO220
ECAD Model:
Datasheet:
STP160N4LF6

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Specifications
STMicroelectronics STP160N4LF6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP160N4LF6.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    DeepGATE™, STripFET™ VI
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STP160
  • Configuration
    Single
  • Power Dissipation-Max
    150W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.9m Ω @ 60A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA (Min)
  • Input Capacitance (Ciss) (Max) @ Vds
    8130pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    181nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    120A
  • RoHS Status
    ROHS3 Compliant
Description
STP160N4LF6 Description
STP160N4LF6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 40V. This product is an N-channel Power MOSFET made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFET that results has the lowest RDS(on) among all packages.

STP160N4LF6 Features
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Logic level drive
High avalanche ruggedness
100% avalanche tested

STP160N4LF6 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
STP160N4LF6 More Descriptions
N-channel 40 V, 0.0021 Ohm typ., 120 A STripFET F6 Power MOSFET in TO-220 package
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 120A 3-Pin TO-220AB Tube
MOSFET, N-CH, 40V, 120A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 150W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: DeepGATE STripFET VI Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Product Comparison
The three parts on the right have similar specifications to STP160N4LF6.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Configuration
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Transistor Application
    Rise Time
    Fall Time (Typ)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    Factory Lead Time
    Number of Pins
    Resistance
    Turn On Delay Time
    Turn-Off Delay Time
    Threshold Voltage
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    View Compare
  • STP160N4LF6
    STP160N4LF6
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    Obsolete
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STP160
    Single
    150W Tc
    N-Channel
    2.9m Ω @ 60A, 10V
    1V @ 250μA (Min)
    8130pF @ 20V
    120A Tc
    181nC @ 10V
    40V
    5V 10V
    ±20V
    120A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP180NS04ZC
    STP180NS04ZC
    STMicroelectronics
    NRND (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    SAFeFET™
    Not For New Designs
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    STP180
    -
    330W Tc
    N-Channel
    4.2m Ω @ 40A, 10V
    4V @ 1mA
    4560pF @ 25V
    120A Tc
    110nC @ 10V
    -
    10V
    ±20V
    120A
    ROHS3 Compliant
    SILICON
    e3
    3
    Matte Tin (Sn)
    3
    R-PSFM-T3
    1
    Single
    ENHANCEMENT MODE
    300W
    SWITCHING
    250ns
    115 ns
    TO-220AB
    20V
    0.0042Ohm
    33V
    480A
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STP160N4LF6 vs STP180NS04ZC
  • STP18NM60N
    STP18NM60N
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    STP18N
    -
    110W Tc
    N-Channel
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    -
    10V
    ±25V
    13A
    ROHS3 Compliant
    SILICON
    -
    3
    -
    3
    -
    1
    Single
    ENHANCEMENT MODE
    110W
    SWITCHING
    15ns
    25 ns
    TO-220AB
    25V
    -
    600V
    52A
    No
    16 Weeks
    3
    285mOhm
    12 ns
    55 ns
    3V
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    Lead Free
    STP160N4LF6 vs STP18NM60N
  • STP16N60M2
    STP16N60M2
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    150°C TJ
    Tube
    MDmesh™ M2
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    STP16N
    Single
    110W Tc
    N-Channel
    320m Ω @ 6A, 10V
    4V @ 250μA
    700pF @ 100V
    12A Tc
    19nC @ 10V
    600V
    10V
    ±25V
    12A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    16 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STP160N4LF6 vs STP16N60M2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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