STMicroelectronics STP14NK60Z

Name: STP14NK60Z
Brand: STMicroelectronics
SKU: 2487976-STP14NK60Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP14NK60Z

Manufacturer:: STMicroelectronics

Ventron No:: 2487976-STP14NK60Z

Description:: MOSFET N-CH 600V 13.5A TO-220

ECAD Model:

Datasheet:: STP14NK60Z

Specifications

STMicroelectronics STP14NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP14NK60Z.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
13.5A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP14N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
500m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2220pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13.5A Tc
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
62 ns
Continuous Drain Current (ID)
13.5A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.5Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
54A
Avalanche Energy Rating (Eas)
300 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP14NK60Z Description
The STP14NK60Z is a SuperMESH? N-channel Power MOSFET offering Zener protection and minimized gate charge. This Power MOSFET STP14NK60Z was developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well-established strip-based PowerMESH? layout. In addition to a significant reduction in ON resistance, this STP14NK60Z is designed to ensure a high level of dV/dt capability for the most demanding applications.

STP14NK60Z Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Zener-protected

STP14NK60Z Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STP14NK60Z More Descriptions

Power MOSFET Transistors N-Ch 600 Volt 13.5 A
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET | MOSFET N-CH 600V 13.5A TO-220

Product Comparison

The three parts on the right have similar specifications to STP14NK60Z.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Number of Pins

Lifecycle Status

Radiation Hardening

Factory Lead Time

Resistance

Turn On Delay Time

Threshold Voltage

Height

Length

Width

REACH SVHC

View Compare
STP14NK60Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

600V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

13.5A

NOT SPECIFIED

STP14N

3

R-PSFM-T3

Not Qualified

1

160W Tc

Single

ENHANCEMENT MODE

160W

N-Channel

SWITCHING

500m Ω @ 6A, 10V

4.5V @ 100μA

2220pF @ 25V

13.5A Tc

75nC @ 10V

18ns

10V

±30V

13 ns

62 ns

13.5A

TO-220AB

30V

0.5Ohm

600V

54A

300 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

FET General Purpose Power

250V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

16A

NOT SPECIFIED

STP16N

3

-

Not Qualified

1

140W Tc

Single

ENHANCEMENT MODE

140W

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

-

16A

TO-220AB

20V

0.28Ohm

250V

64A

600 mJ

ROHS3 Compliant

-

3

-

-

-

-

-

-

-

-

-

-

STP14NK60Z vs STP16NS25
STP180NS04ZC

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP180

3

R-PSFM-T3

-

1

330W Tc

Single

ENHANCEMENT MODE

300W

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

-

120A

TO-220AB

20V

0.0042Ohm

33V

480A

-

ROHS3 Compliant

-

-

NRND (Last Updated: 8 months ago)

No

-

-

-

-

-

-

-

-

STP14NK60Z vs STP180NS04ZC
STP18NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Active

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP18N

3

-

-

1

110W Tc

Single

ENHANCEMENT MODE

110W

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

55 ns

13A

TO-220AB

25V

-

600V

52A

-

ROHS3 Compliant

Lead Free

3

ACTIVE (Last Updated: 8 months ago)

No

16 Weeks

285mOhm

12 ns

3V

15.75mm

10.4mm

4.6mm

No SVHC

STP14NK60Z vs STP18NM60N