S8050 Bipolar Transistor: Manufacturer, Specifications, S8050 vs SS8050 and More Details

Ⅰ. Introduction to S8050 transistor

Ⅱ. Manufacturer of S8050 transistor

Ⅲ. Specifications of S8050 transistor

Ⅳ. Symbol, footprint and pin configuration of S8050 transistor

Ⅴ. What are the features of S8050 transistor?

Ⅵ. How does the S8050 transistor work?

Ⅶ. What is the difference between S8050 and SS8050?

Ⅷ. Package of S8050 transistor

Ⅸ. Types of S8050 transistor

Ⅹ. What are the applications of S8050 transistor?

S8050 is a low-power NPN silicon tube, which is composed of emitter area, base area and collector area. Its main function is to help electric current pass between circuits. Despite its small dimensions, the S8050 boasts the ability to endure high voltages and currents, resulting in exceptional durability and a lengthy operational lifespan. It can handle a maximum collector-base voltage of 40V and a collector current of 0.5A. The S8050 stands as a prevalent choice among semiconductor transistor models in circuit hardware design.

Replacements and equivalents:

• BC547

• MPSA42

• S9013

• 2N2369

• 2N3906

The S8050 is manufactured by Micro Commercial Components Corp. (MCC). MCC is a global supplier and manufacturer founded in 1991, headquartered in California, USA, specializing in the production of commercial and advanced innovative discrete semiconductors. The company's products include transistors, rectifiers, voltage regulators, MOSFETs, diodes and protection devices available in a variety of axial lead and surface mount packages. In addition, it offers a wide range of semiconductor devices in different sizes and types to meet customer needs.

• Type: NPN

• Package: TO-92

• Junction temperature (TJ): 150°C

• Collector-base voltage (VCB): 30V

• Collector-emitter voltage (VCE): 20V

• Base-emitter voltage (VBE): 5V

• Collector current: 0.5A

• Collector-emitter saturation voltage (VCE): 0.6V

• DC current gain: 40~400hFE

• Collector dissipation: 300 mW

The figure below shows the symbol, footprint and pin configuration of the S8050 transistor.

It contains three layers, in which a P-doped semiconductor layer is encapsulated between two N-doped layers. The base terminal is a P-doped layer, while the emitter and collector are the other two layers. The transistor has three pins, their names and descriptions are as follows.

Pin 1 (Emitter): It’s the pin via which current drains from the transistor.

Pin 2 (Base): The base terminal triggers the transistor.

Pin 3 (Collector): It is the terminal via which collector currents leave the transistor.

• Complementary PNP: The S8550 is a complementary PNP transistor to the S8050, and they are often used together in push-pull amplifier configurations.

• Amplification characteristics: It can be used as an amplifier and has moderate current amplification characteristics. Its amplification factor is usually between 30 and 300.

• High voltage resistance and high power: Despite its small size, the S8050 transistor boasts a VCEO of 25V and a maximum power rating of 2W. This enables it to function effectively in high-voltage conditions and deliver ample power for driving various circuits.

• Low voltage, high current: It usually operates at low voltage and can withstand larger currents.

• High frequency: It is a small semiconductor device with fast switching characteristics which makes it suitable for high frequency applications.

• Small signal transistor: S8050 transistor is usually used to process small signals, such as audio amplification or switching circuits. Its hFE is between 40-400, which allows it to amplify smaller input signals into larger output signals.

Its working principle is based on the forward and reverse bias characteristics of the PN junction.

1. Forward bias of PN junction

When the collector of the S8050 is forward biased, that is, the collector voltage is greater than the base voltage, the PN junction will be in a forward biased state. At this time, a forward bias voltage is formed between the base and the emitter, causing the base region to become narrower and the carrier concentration to increase. The forward bias voltage will attract a large number of electrons to be injected from the emitter to the base region, and at the same time drive a large number of holes to flow from the base region to the emitter. In the forward biased state, a conductive channel is formed between the collector and emitter of the S8050, and current can flow from the collector to the emitter.

2. Reverse bias of PN junction

When the collector of the S8050 is reverse biased, that is, the collector voltage is less than the base voltage, the PN junction will be in a reverse biased state. At this time, a reverse bias voltage is formed between the base and the emitter, causing the depletion region to become wider and the carrier concentration to decrease. The reverse bias voltage prevents the injection of electrons from the emitter to the base region and restricts the flow of holes from the base region to the emitter. In the reverse biased state, a cut-off channel is formed between the collector and emitter of the S8050, and current cannot flow from the collector to the emitter.

S8050 and SS8050 are both transistors, but there are some differences between them.

On the one hand, the two transistors differ in their parameters. For instance, the S8050 has a maximum drain voltage of -40V, whereas the SS8050 has a maximum drain voltage of -25V. Additionally, the S8050 can handle a maximum drain current of 700mA, while the SS8050 can handle up to 1.5A of maximum drain current.

On the other hand, there are also differences in polarity between the two. S8050 is a PNP transistor, while SS8050 is an NPN transistor. In circuit design, these two transistors are suitable for different application scenarios due to their opposite polarity.

The S8050 transistor comes in two package options: plug-in and SMD. Typically, TO-92 package is used for plug-in transistors, whereas SOT-23 package is preferred for chip transistors.

• According to power: small power tube, medium power tube and high power tube

• According to the installation method: SMD transistor, plug-in transistor

• According to material: silicon tube and germanium tube

• According to operating frequency: low frequency tube, high frequency tube and overclocking tube

• According to structural technology: flat tube, alloy tube

• According to structure: NPN transistor, PNP transistor

• According to function: power transistor, switching transistor, photosensitive transistor and Darlington transistor, etc.

1. Power control circuit

By adjusting the current and voltage of the S8050 transistor, the working state and power output of the load can be changed. By controlling the amplitude and frequency of the input signal, precise control of the load power can be achieved.

2. Voltage stabilizing circuit

The S8050 transistor can be employed in voltage stabilizing circuits to maintain a consistent voltage output, achieving stability by regulating the current flow.

3. Amplification circuit

It can amplify a weak input signal into a larger output signal to achieve the signal gain function.

4. Switch circuit

The S8050 transistor is versatile for applications in switching circuits, enabling the control of power supplies or loads by toggling current paths in various operational states.

5. Audio amplifier

With appropriate bias current and voltage control, the S8050 transistor can amplify the incoming audio signal to a sufficient level to drive speakers or headphones to produce audible sound.

Frequently Asked Questions

1. What is the equivalent of S8050?

Its equivalent models could be 2N5830, S9013, S9014, and 2N5551.

2. What is the function of S8050?

The S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifiers and general-purpose applications. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

3. What is S8050 transistor used for?

This transistor is used for audio amplification as well as a wide range of general-purpose applications in electronic circuits, such as switching. The S8050 transistor works as a low voltage, high current transistor device in applications, and as a result, S8050 transistors are used in more general-purpose circuits.

4. What is the difference between S8050 and BC547 transistor?

The BC547 is categorized as "designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA." The S8050 is categorized as "a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications."