STMicroelectronics STP14NK50ZFP

Name: STP14NK50ZFP
Brand: STMicroelectronics
SKU: 2478993-STP14NK50ZFP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP14NK50ZFP

Manufacturer:: STMicroelectronics

Ventron No:: 2478993-STP14NK50ZFP

Description:: MOSFET N-CH 500V 14A TO-220FP

ECAD Model:

Datasheet:: STP14NK50ZFP

Specifications

STMicroelectronics STP14NK50ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP14NK50ZFP.

Lifecycle Status
ACTIVE (Last Updated: 6 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP14N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
35W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
35W
Case Connection
ISOLATED
Turn On Delay Time
24 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Rise Time
16ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
54 ns
Continuous Drain Current (ID)
6A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
48A
Avalanche Energy Rating (Eas)
400 mJ
Height
9.3mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STP14NK50ZFP Description
The STP14NK50ZFP is obtained through an extreme optimization of ST’s well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special
care is taken to ensure a very good DV/DT capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.
STP14NK50ZFP Features
Extremely high DV/DT capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability

STP14NK50ZFP Applications

Switching application

STP14NK50ZFP More Descriptions

N-Channel 500 V 380 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N Channel, 500V, 14A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP14NK50ZFP
Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP14NK50ZFP.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Resistance

Number of Channels

Max Junction Temperature (Tj)

Lead Free

JESD-30 Code

View Compare
STP14NK50ZFP

STMicroelectronics

ACTIVE (Last Updated: 6 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

STP14N

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

24 ns

N-Channel

SWITCHING

380m Ω @ 6A, 10V

4.5V @ 100μA

2000pF @ 25V

14A Tc

92nC @ 10V

16ns

10V

±30V

12 ns

54 ns

6A

3.75V

TO-220AB

30V

500V

48A

400 mJ

9.3mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

-

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

-

16A

-

TO-220AB

20V

250V

64A

600 mJ

-

-

-

-

-

ROHS3 Compliant

250V

NOT SPECIFIED

not_compliant

16A

NOT SPECIFIED

Not Qualified

0.28Ohm

-

-

-

-

-

STP14NK50ZFP vs STP16NS25
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

500V

48A

400 mJ

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

500V

-

-

12A

-

-

-

350mOhm

1

150°C

Lead Free

-

STP14NK50ZFP vs STP12NM50FP
STP150N3LLH6

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP150

3

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

-

N-Channel

SWITCHING

3.3m Ω @ 40A, 10V

2.5V @ 250μA

4040pF @ 25V

80A Tc

40nC @ 4.5V

18ns

4.5V 10V

±20V

46 ns

75 ns

80A

-

TO-220AB

20V

30V

320A

525 mJ

-

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

not_compliant

-

NOT SPECIFIED

Not Qualified

-

3.3MOhm

-

-

Lead Free

R-PSFM-T3

STP14NK50ZFP vs STP150N3LLH6