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STP13NM60N

STMicroelectronics STP13NM60N

Part Number:
STP13NM60N
Manufacturer:
STMicroelectronics
Ventron No:
2481064-STP13NM60N
Description:
MOSFET N-CH 600V 11A TO-220
ECAD Model:
Datasheet:
STP13NM60N

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Specifications
STMicroelectronics STP13NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP13NM60N.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    360mOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP13N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    90W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    90W
  • Turn On Delay Time
    3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    360m Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    790pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    5.5A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    44A
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Nominal Vgs
    3 V
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP13NM60N Description
The STP13NM60N device is N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STP13NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
ROHS3 Compliant
No SVHC
Lead Free

STP13NM60N Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
STP13NM60N More Descriptions
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 11A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:90W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to STP13NM60N.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Drain-source On Resistance-Max
    Configuration
    Drain to Source Voltage (Vdss)
    Case Connection
    View Compare
  • STP13NM60N
    STP13NM60N
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    16 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    360mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP13N
    3
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    3 ns
    N-Channel
    SWITCHING
    360m Ω @ 5.5A, 10V
    4V @ 250μA
    790pF @ 50V
    11A Tc
    30nC @ 10V
    8ns
    10V
    ±25V
    10 ns
    30 ns
    5.5A
    3V
    TO-220AB
    25V
    600V
    44A
    200 mJ
    3 V
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP11NM60A
    STP11NM60A
    STMicroelectronics
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP11N
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    -
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    4V @ 250μA
    1211pF @ 25V
    11A Tc
    49nC @ 10V
    15ns
    10V
    ±30V
    10 ns
    -
    11A
    -
    TO-220AB
    30V
    600V
    44A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    600V
    245
    not_compliant
    11A
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    0.45Ohm
    -
    -
    -
    STP13NM60N vs STP11NM60A
  • STP16N60M2
    STP16N60M2
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    150°C TJ
    Tube
    MDmesh™ M2
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP16N
    -
    -
    110W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    320m Ω @ 6A, 10V
    4V @ 250μA
    700pF @ 100V
    12A Tc
    19nC @ 10V
    -
    10V
    ±25V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    600V
    -
    STP13NM60N vs STP16N60M2
  • STP150N3LLH6
    STP150N3LLH6
    STMicroelectronics
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    3.3MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP150
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    -
    TO-220AB
    20V
    30V
    320A
    525 mJ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    -
    NOT SPECIFIED
    not_compliant
    -
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    -
    -
    -
    DRAIN
    STP13NM60N vs STP150N3LLH6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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