STMicroelectronics STP13NM50N

STP13NM50N Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 960pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 12A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Peak drain current is 48A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP13NM50N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 48A.


STP13NM50N Applications
There are a lot of STMicroelectronics
STP13NM50N applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies