STP13NK60Z

STMicroelectronics STP13NK60Z

Part Number:
STP13NK60Z
Manufacturer:
STMicroelectronics
Ventron No:
2849382-STP13NK60Z
Description:
MOSFET N-CH 600V 13A TO-220
ECAD Model:
Datasheet:
STP13NK60Z

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Specifications
STMicroelectronics STP13NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP13NK60Z.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    13A
  • Base Part Number
    STP13N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150W
  • Turn On Delay Time
    22 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    550m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2030pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    92nC @ 10V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    61 ns
  • Continuous Drain Current (ID)
    13A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.55Ohm
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    52A
  • Avalanche Energy Rating (Eas)
    400 mJ
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STP13NK60Z Description
STP13NK60Z is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM topology. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications.

STP13NK60Z Features
The gate charge has been reduced.
Intrinsically low capacitances
Exceptional manufacturing consistency

STP13NK60Z Applications
Switching applications



STP13NK60Z More Descriptions
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
Transistor MOSFET N-CH 600V 13A 3-Pin (3 Tab) TO-220 Tube
STP13NK60 Series 600 V 13 A 550 mOhm Through Hole N-Ch Power MOSFET - TO-220-3
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP13NK60Z.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Resistance
    Additional Feature
    Number of Channels
    Case Connection
    Max Junction Temperature (Tj)
    Lead Free
    Configuration
    Drain to Source Voltage (Vdss)
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    View Compare
  • STP13NK60Z
    STP13NK60Z
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    13A
    STP13N
    3
    1
    150W Tc
    Single
    ENHANCEMENT MODE
    150W
    22 ns
    N-Channel
    SWITCHING
    550m Ω @ 4.5A, 10V
    4.5V @ 100μA
    2030pF @ 25V
    13A Tc
    92nC @ 10V
    14ns
    10V
    ±30V
    12 ns
    61 ns
    13A
    3.75V
    TO-220AB
    30V
    0.55Ohm
    600V
    52A
    400 mJ
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP12NM50FP
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    e3
    Active
    1 (Unlimited)
    3
    -
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    12A
    STP12
    3
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    20 ns
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    10ns
    10V
    ±30V
    -
    -
    12A
    4V
    TO-220AB
    30V
    -
    500V
    48A
    400 mJ
    20mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    350mOhm
    AVALANCHE RATED
    1
    ISOLATED
    150°C
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • STP16N60M2
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    150°C TJ
    Tube
    MDmesh™ M2
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP16N
    -
    -
    110W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    320m Ω @ 6A, 10V
    4V @ 250μA
    700pF @ 100V
    12A Tc
    19nC @ 10V
    -
    10V
    ±25V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    Single
    600V
    -
    -
    -
    -
    -
  • STP150N3LLH6
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP150
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    -
    TO-220AB
    20V
    -
    30V
    320A
    525 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    3.3MOhm
    -
    -
    DRAIN
    -
    Lead Free
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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