STMicroelectronics STP13NK60Z
- Part Number:
- STP13NK60Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2849382-STP13NK60Z
- Description:
- MOSFET N-CH 600V 13A TO-220
- Datasheet:
- STP13NK60Z
STMicroelectronics STP13NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP13NK60Z.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating13A
- Base Part NumberSTP13N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Turn On Delay Time22 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs550m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2030pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time61 ns
- Continuous Drain Current (ID)13A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.55Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)52A
- Avalanche Energy Rating (Eas)400 mJ
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STP13NK60Z Description
STP13NK60Z is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM topology. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications.
STP13NK60Z Features
The gate charge has been reduced.
Intrinsically low capacitances
Exceptional manufacturing consistency
STP13NK60Z Applications
Switching applications
STP13NK60Z is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM topology. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications.
STP13NK60Z Features
The gate charge has been reduced.
Intrinsically low capacitances
Exceptional manufacturing consistency
STP13NK60Z Applications
Switching applications
STP13NK60Z More Descriptions
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
Transistor MOSFET N-CH 600V 13A 3-Pin (3 Tab) TO-220 Tube
STP13NK60 Series 600 V 13 A 550 mOhm Through Hole N-Ch Power MOSFET - TO-220-3
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor MOSFET N-CH 600V 13A 3-Pin (3 Tab) TO-220 Tube
STP13NK60 Series 600 V 13 A 550 mOhm Through Hole N-Ch Power MOSFET - TO-220-3
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP13NK60Z.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusResistanceAdditional FeatureNumber of ChannelsCase ConnectionMax Junction Temperature (Tj)Lead FreeConfigurationDrain to Source Voltage (Vdss)Peak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusView Compare
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STP13NK60ZACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Tin (Sn)FET General Purpose Power600VMOSFET (Metal Oxide)13ASTP13N31150W TcSingleENHANCEMENT MODE150W22 nsN-ChannelSWITCHING550m Ω @ 4.5A, 10V4.5V @ 100μA2030pF @ 25V13A Tc92nC @ 10V14ns10V±30V12 ns61 ns13A3.75VTO-220AB30V0.55Ohm600V52A400 mJ9.15mm10.4mm4.6mmNo SVHCNoROHS3 Compliant--------------
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ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-65°C~150°C TJTubeMDmesh™e3Active1 (Unlimited)3-Matte Tin (Sn) - annealedFET General Purpose Power500VMOSFET (Metal Oxide)12ASTP123135W TcSingleENHANCEMENT MODE35W20 nsN-ChannelSWITCHING350m Ω @ 6A, 10V5V @ 50μA1000pF @ 25V12A Tc39nC @ 10V10ns10V±30V--12A4VTO-220AB30V-500V48A400 mJ20mm10.4mm4.6mm-NoROHS3 Compliant350mOhmAVALANCHE RATED1ISOLATED150°CLead Free-------
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3--150°C TJTubeMDmesh™ M2-Active1 (Unlimited)-EAR99-FET General Purpose Power-MOSFET (Metal Oxide)-STP16N--110W Tc-ENHANCEMENT MODE--N-Channel-320m Ω @ 6A, 10V4V @ 250μA700pF @ 100V12A Tc19nC @ 10V-10V±25V--12A------------ROHS3 Compliant------Single600V-----
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--Through HoleThrough HoleTO-220-3-SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VIe3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STP15031110W TcSingleENHANCEMENT MODE110W-N-ChannelSWITCHING3.3m Ω @ 40A, 10V2.5V @ 250μA4040pF @ 25V80A Tc40nC @ 4.5V18ns4.5V 10V±20V46 ns75 ns80A-TO-220AB20V-30V320A525 mJ-----ROHS3 Compliant3.3MOhm--DRAIN-Lead Free--NOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSFM-T3Not Qualified
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