STMicroelectronics STP12N50M2

Name: STP12N50M2
Brand: STMicroelectronics
SKU: 2849542-STP12N50M2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP12N50M2

Manufacturer:: STMicroelectronics

Ventron No:: 2849542-STP12N50M2

Description:: MOSFET N-CH 500V 10A TO-220AB

ECAD Model:

Datasheet:: STP12N50M2

Specifications

STMicroelectronics STP12N50M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12N50M2.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II Plus
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP12
Configuration
Single
Power Dissipation-Max
85W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
380m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
560pF @ 100V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
10A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP12N50M2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 560pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

STP12N50M2 Features
a continuous drain current (ID) of 10A
a 500V drain to source voltage (Vdss)

STP12N50M2 Applications
There are a lot of STMicroelectronics
STP12N50M2 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

STP12N50M2 More Descriptions

N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package
STP12N50M2: 500V 0.38 Ohm 10A N-Ch. MDmesh II Plus Low Qg Power Mosfet-TO-220AB
Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 500V 10A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N-Ch, 500V, 10A, To-220 Rohs Compliant: Yes |Stmicroelectronics STP12N50M2

Product Comparison

The three parts on the right have similar specifications to STP12N50M2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Configuration

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

RoHS Status

Lead Free

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Resistance

Terminal Finish

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

JESD-30 Code

View Compare
STP12N50M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-55°C~150°C TJ

Tube

MDmesh™ II Plus

Active

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP12

Single

85W Tc

N-Channel

380m Ω @ 5A, 10V

4V @ 250μA

560pF @ 100V

10A Tc

15nC @ 10V

500V

10V

±25V

10A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

SuperMESH™

Obsolete

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

STP16N

-

190W Tc

N-Channel

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

-

10V

±30V

14A

ROHS3 Compliant

Lead Free

3

SILICON

e3

yes

3

38Ohm

Matte Tin (Sn)

600V

14A

3

1

Single

ENHANCEMENT MODE

190W

30 ns

SWITCHING

25ns

15 ns

70 ns

3.75V

TO-220AB

30V

600V

56A

15.75mm

10.4mm

4.6mm

No SVHC

No

-

-

-

-

-

STP12N50M2 vs STP16NK60Z
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-65°C~150°C TJ

Tube

MESH OVERLAY™

Obsolete

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP16N

-

140W Tc

N-Channel

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

-

10V

±20V

16A

ROHS3 Compliant

-

3

SILICON

e3

-

3

-

Matte Tin (Sn)

250V

16A

3

1

Single

ENHANCEMENT MODE

140W

-

SWITCHING

26ns

32 ns

-

-

TO-220AB

20V

250V

64A

-

-

-

-

-

not_compliant

Not Qualified

0.28Ohm

600 mJ

-

STP12N50M2 vs STP16NS25
STP180NS04ZC

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

SAFeFET™

Not For New Designs

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

STP180

-

330W Tc

N-Channel

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

-

10V

±20V

120A

ROHS3 Compliant

-

-

SILICON

e3

-

3

-

Matte Tin (Sn)

-

-

3

1

Single

ENHANCEMENT MODE

300W

-

SWITCHING

250ns

115 ns

-

-

TO-220AB

20V

33V

480A

-

-

-

-

No

-

-

0.0042Ohm

-

R-PSFM-T3

STP12N50M2 vs STP180NS04ZC

Certification

Related parts for STP12N50M2

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STP16NS25

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MOSFET N-CH 250V 16A TO-220
STP11NM60FD

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MOSFET N-CH 600V 11A TO-220
STP180NS04ZC

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STP12N5~~(1)~~
STP12N~~(21)~~
STP12~~(30)~~
STP1~~(58)~~
STP~~(58)~~

Part Number	Manufacturers	Description	Stock	Price
STP12N50M2 DISTI #V99:2348_17623426	STMicroelectronics	Trans MOSFET N-CH 500V 10A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	410	1 $1.1374 50 $0.5922 100 $0.5741 500 $0.5602 1000 $0.5376
STP12N50M2 DISTI #497-15273-5-ND	STMicroelectronics	MOSFET N-CH 500V 10A TO-220AB RoHS: Compliant	0	1000 $1.26005
STP12N50M2 DISTI #25947939	STMicroelectronics	Trans MOSFET N-CH 500V 10A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	410	7 $1.1374
STP12N50M2 DISTI #STP12N50M2	STMicroelectronics	Trans MOSFET N-CH 500V 10A 3-Pin TO-220 Tube (Alt: RoHS: Compliant	1000	50 $2.4919 100 $1.5749 200 $1.1889 300 $1.1629 500 $1.0819
STP12N50M2 DISTI #STP12N50M2	STMicroelectronics	Trans MOSFET N-CH 500V 10A 3-Pin TO-220 Tube - Rai RoHS: Compliant	0	1000 $1.1839 2000 $1.1279 4000 $1.0769 6000 $1.0289 10000 $1.0079
STP12N50M2 DISTI #41Y5971	STMicroelectronics	PTD HIGH VOLTAGE	0	1 $0.988
STP12N50M2. DISTI #30AC0937	STMicroelectronics	PTD HIGH VOLTAGE	0	1 $0.988
STP12N50M2 DISTI #511-STP12N50M2	STMicroelectronics	MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmes RoHS: Compliant	643	1 $2.33 10 $1.98 100 $1.58 500 $1.39 1000 $1.15 2000 $1.07 5000 $1.03
STP12N50M2 DISTI #	STMicroelectronics	N-Channel 500 V 0.38 O 85 W Flange Mount MDmesh II RoHS: Not Compliant	1000	5 $2.03 30 $1.9 125 $1.64 300 $1.49
STP12N50M2 DISTI #	STMicroelectronics	Power Field-Effect Transistor, N-Channel, Metal-ox RoHS: Compliant	1000
STP12N50M2 DISTI #	STMicroelectronics		2422
STP12N50M2 DISTI #XSKDRABV0028127	STMicroelectronics	PowerField-EffectTransistor,10AI(D),600V,0.75ohm,1 RoHS: Compliant	800	450 $1.872 800 $1.74
STP12N50M2 DISTI #XSFP00000148447	STMicroelectronics	N-Channel 500 V 0.47 Surface Mount Mdmesh IIPower RoHS: Compliant	800	50 $4.06 800 $3.69

STMicroelectronics STP12N50M2

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