STMicroelectronics STP120NF10

Name: STP120NF10
Brand: STMicroelectronics
SKU: 2482985-STP120NF10
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP120NF10

Manufacturer:: STMicroelectronics

Ventron No:: 2482985-STP120NF10

Description:: MOSFET N-CH 100V 110A TO-220

ECAD Model:

Datasheet:: STP120NF10

Specifications

STMicroelectronics STP120NF10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP120NF10.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
10.5mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
120A
Base Part Number
STP120
Pin Count
3
Number of Elements
1
Power Dissipation-Max
312W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
312W
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
233nC @ 10V
Rise Time
90ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
68 ns
Turn-Off Delay Time
132 ns
Continuous Drain Current (ID)
110A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
440A
Avalanche Energy Rating (Eas)
550 mJ
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP120NF10 Description
The STP120NF10 is an N-channel 100 V, 9.0 m typ., 110 A STripFET? I II Power MOSFET with low input capacitance and gate charge. As a result, the STP120NF10 is appropriate for use as the primary switch in sophisticated high-efficiency isolated DC-DC converters for telecom and computer applications, as well as applications requiring low gate charge driving.

STP120NF10 Features
Exceptional dv/dt capability
100% avalanche tested
Low gate charge

STP120NF10 Applications
Switching applications

STP120NF10 More Descriptions

N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-220 package
Trans MOSFET N-CH 100V 110A 3-Pin(3 Tab) TO-220AB Tube
N-Channel 100 V 10.5 mO STripFET II MosFet - TO-220
MOSFET N-Ch 100V 110A UltraFET II TO220
Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 312W

Product Comparison

The three parts on the right have similar specifications to STP120NF10.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Number of Channels

Max Junction Temperature (Tj)

JESD-30 Code

View Compare
STP120NF10

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

10.5mOhm

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

100V

MOSFET (Metal Oxide)

120A

STP120

3

1

312W Tc

Single

ENHANCEMENT MODE

312W

DRAIN

25 ns

N-Channel

SWITCHING

10.5m Ω @ 60A, 10V

4V @ 250μA

5200pF @ 25V

110A Tc

233nC @ 10V

90ns

10V

±20V

68 ns

132 ns

110A

4V

TO-220AB

20V

100V

440A

550 mJ

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

-

FET General Purpose Power

250V

MOSFET (Metal Oxide)

16A

STP16N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

-

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

-

16A

-

TO-220AB

20V

250V

64A

600 mJ

-

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

0.28Ohm

-

-

-

STP120NF10 vs STP16NS25
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

350mOhm

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

500V

MOSFET (Metal Oxide)

12A

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

500V

48A

400 mJ

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

1

150°C

-

STP120NF10 vs STP12NM50FP
STP150N3LLH6

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

e3

Obsolete

1 (Unlimited)

3

EAR99

3.3MOhm

Matte Tin (Sn)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP150

3

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

-

N-Channel

SWITCHING

3.3m Ω @ 40A, 10V

2.5V @ 250μA

4040pF @ 25V

80A Tc

40nC @ 4.5V

18ns

4.5V 10V

±20V

46 ns

75 ns

80A

-

TO-220AB

20V

30V

320A

525 mJ

-

-

-

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

-

-

-

R-PSFM-T3

STP120NF10 vs STP150N3LLH6