STMicroelectronics STP110N8F6

Name: STP110N8F6
Brand: STMicroelectronics
SKU: 2480349-STP110N8F6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP110N8F6

Manufacturer:: STMicroelectronics

Ventron No:: 2480349-STP110N8F6

Description:: MOSFET N-CH 80V 110A TO-220

ECAD Model:

Datasheet:: STP110N8F6

Specifications

STMicroelectronics STP110N8F6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP110N8F6.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ F6
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP110
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
200W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.5m Ω @ 55A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9130pF @ 40V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
110A
JEDEC-95 Code
TO-220AB
Drain-source On Resistance-Max
0.0065Ohm
Pulsed Drain Current-Max (IDM)
440A
DS Breakdown Voltage-Min
80V
Avalanche Energy Rating (Eas)
180 mJ
RoHS Status
ROHS3 Compliant

Description

STP110N8F6 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The maximum input capacitance of this device is 9130pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110A.There is no pulsed drain current maximum for this device based on its rated peak drain current 440A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 80V.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

STP110N8F6 Features
the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 440A.
a 80V drain to source voltage (Vdss)

STP110N8F6 Applications
There are a lot of STMicroelectronics
STP110N8F6 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

STP110N8F6 More Descriptions

N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
Trans MOSFET N-CH 80V 110A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 80V 110A TO-220
Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 110A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP110N8F6.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

JESD-609 Code

Terminal Finish

Subcategory

Pin Count

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Number of Pins

Resistance

Additional Feature

Voltage - Rated DC

Current Rating

Number of Channels

Turn On Delay Time

Threshold Voltage

Max Junction Temperature (Tj)

Height

Length

Width

Lead Free

Turn-Off Delay Time

REACH SVHC

View Compare
STP110N8F6

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

20 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

STripFET™ F6

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

STP110

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

200W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.5m Ω @ 55A, 10V

4.5V @ 250μA

9130pF @ 40V

110A Tc

150nC @ 10V

80V

10V

±20V

110A

TO-220AB

0.0065Ohm

440A

80V

180 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP180NS04ZC

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

Not For New Designs

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

-

-

-

STP180

R-PSFM-T3

1

-

330W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

-

10V

±20V

120A

TO-220AB

0.0042Ohm

480A

-

-

ROHS3 Compliant

e3

Matte Tin (Sn)

FET General Purpose Power

3

Single

300W

250ns

115 ns

20V

33V

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP110N8F6 vs STP180NS04ZC
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

SILICON

-65°C~150°C TJ

Tube

MDmesh™

Active

1 (Unlimited)

3

-

MOSFET (Metal Oxide)

-

-

-

STP12

-

1

-

35W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

-

10V

±30V

12A

TO-220AB

-

48A

-

400 mJ

ROHS3 Compliant

e3

Matte Tin (Sn) - annealed

FET General Purpose Power

3

Single

35W

10ns

-

30V

500V

No

3

350mOhm

AVALANCHE RATED

500V

12A

1

20 ns

4V

150°C

20mm

10.4mm

4.6mm

Lead Free

-

-

STP110N8F6 vs STP12NM50FP
STP18NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

-

-

-

STP18N

-

1

-

110W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

-

10V

±25V

13A

TO-220AB

-

52A

-

-

ROHS3 Compliant

-

-

FET General Purpose Power

3

Single

110W

15ns

25 ns

25V

600V

No

3

285mOhm

-

-

-

-

12 ns

3V

-

15.75mm

10.4mm

4.6mm

Lead Free

55 ns

No SVHC

STP110N8F6 vs STP18NM60N