STP10NM50N

STMicroelectronics STP10NM50N

Part Number:
STP10NM50N
Manufacturer:
STMicroelectronics
Ventron No:
2488141-STP10NM50N
Description:
MOSFET N-CH 500V 7A TO220
ECAD Model:
Datasheet:
STx10NM50N

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics STP10NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10NM50N.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ II
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    630mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP10
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Turn On Delay Time
    7.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    630m Ω @ 3.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    4.4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    7.8 ns
  • Continuous Drain Current (ID)
    7A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    28A
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP10NM50N Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 450pF @ 50V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 7A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7.8 ns.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (10V).

STP10NM50N Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 7.8 ns
based on its rated peak drain current 28A.
a threshold voltage of 3V


STP10NM50N Applications
There are a lot of STMicroelectronics
STP10NM50N applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STP10NM50N More Descriptions
N-channel 500 V, 0.53 Ohm, 7 A TO-220 MDmesh(TM) II Power MOSFET
Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 500V, 7A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Product Comparison
The three parts on the right have similar specifications to STP10NM50N.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Number of Channels
    Case Connection
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Configuration
    Drain to Source Voltage (Vdss)
    View Compare
  • STP10NM50N
    STP10NM50N
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    630mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP10
    3
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    7.8 ns
    N-Channel
    SWITCHING
    630m Ω @ 3.5A, 10V
    4V @ 250μA
    450pF @ 50V
    7A Tc
    17nC @ 10V
    4.4ns
    10V
    ±25V
    12 ns
    7.8 ns
    7A
    3V
    TO-220AB
    25V
    7A
    500V
    28A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP11NM60FD
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    Tube
    FDmesh™
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP11N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    -
    600V
    44A
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    150°C
    -65°C
    AVALANCHE RATED
    600V
    11A
    -
    -
    -
    -
    -
    -
  • STP12NM50FP
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    e3
    -
    Active
    1 (Unlimited)
    3
    -
    350mOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP12
    3
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    20 ns
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    10ns
    10V
    ±30V
    -
    -
    12A
    4V
    TO-220AB
    30V
    -
    500V
    48A
    20mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    -
    AVALANCHE RATED
    500V
    12A
    1
    ISOLATED
    400 mJ
    150°C
    -
    -
  • STP16N60M2
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    150°C TJ
    Tube
    MDmesh™ M2
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP16N
    -
    -
    110W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    320m Ω @ 6A, 10V
    4V @ 250μA
    700pF @ 100V
    12A Tc
    19nC @ 10V
    -
    10V
    ±25V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    600V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.