STMicroelectronics STP10NM50N
- Part Number:
- STP10NM50N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488141-STP10NM50N
- Description:
- MOSFET N-CH 500V 7A TO220
- Datasheet:
- STx10NM50N
STMicroelectronics STP10NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10NM50N.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance630mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP10
- Pin Count3
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Turn On Delay Time7.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs630m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds450pF @ 50V
- Current - Continuous Drain (Id) @ 25°C7A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time4.4ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time7.8 ns
- Continuous Drain Current (ID)7A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain Current-Max (Abs) (ID)7A
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)28A
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP10NM50N Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 450pF @ 50V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 7A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7.8 ns.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (10V).
STP10NM50N Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 7.8 ns
based on its rated peak drain current 28A.
a threshold voltage of 3V
STP10NM50N Applications
There are a lot of STMicroelectronics
STP10NM50N applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 450pF @ 50V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 7A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7.8 ns.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (10V).
STP10NM50N Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 7.8 ns
based on its rated peak drain current 28A.
a threshold voltage of 3V
STP10NM50N Applications
There are a lot of STMicroelectronics
STP10NM50N applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STP10NM50N More Descriptions
N-channel 500 V, 0.53 Ohm, 7 A TO-220 MDmesh(TM) II Power MOSFET
Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 500V, 7A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 500V, 7A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
The three parts on the right have similar specifications to STP10NM50N.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeMax Operating TemperatureMin Operating TemperatureAdditional FeatureVoltage - Rated DCCurrent RatingNumber of ChannelsCase ConnectionAvalanche Energy Rating (Eas)Max Junction Temperature (Tj)ConfigurationDrain to Source Voltage (Vdss)View Compare
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STP10NM50NThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeMDmesh™ IIe3yesObsolete1 (Unlimited)3EAR99630mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP103170W TcSingleENHANCEMENT MODE70W7.8 nsN-ChannelSWITCHING630m Ω @ 3.5A, 10V4V @ 250μA450pF @ 50V7A Tc17nC @ 10V4.4ns10V±25V12 ns7.8 ns7A3VTO-220AB25V7A500V28A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------------
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Through HoleThrough HoleTO-220-33--TubeFDmesh™e3-Active1 (Unlimited)3EAR99450mOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP11N31160W TcSingleENHANCEMENT MODE160W20 nsN-ChannelSWITCHING450m Ω @ 5.5A, 10V5V @ 250μA900pF @ 25V11A Tc40nC @ 10V16ns10V±30V15 ns-11A-TO-220AB30V-600V44A15.75mm10.4mm4.6mm-NoROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)16 Weeks150°C-65°CAVALANCHE RATED600V11A------
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Through HoleThrough HoleTO-220-3 Full Pack3SILICON-65°C~150°C TJTubeMDmesh™e3-Active1 (Unlimited)3-350mOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STP123135W TcSingleENHANCEMENT MODE35W20 nsN-ChannelSWITCHING350m Ω @ 6A, 10V5V @ 50μA1000pF @ 25V12A Tc39nC @ 10V10ns10V±30V--12A4VTO-220AB30V-500V48A20mm10.4mm4.6mm-NoROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)16 Weeks--AVALANCHE RATED500V12A1ISOLATED400 mJ150°C--
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Through HoleThrough HoleTO-220-3--150°C TJTubeMDmesh™ M2--Active1 (Unlimited)-EAR99--FET General Purpose PowerMOSFET (Metal Oxide)STP16N--110W Tc-ENHANCEMENT MODE--N-Channel-320m Ω @ 6A, 10V4V @ 250μA700pF @ 100V12A Tc19nC @ 10V-10V±25V--12A-----------ROHS3 Compliant-ACTIVE (Last Updated: 8 months ago)16 Weeks---------Single600V
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