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STP10NK70ZFP

STMicroelectronics STP10NK70ZFP

Part Number:
STP10NK70ZFP
Manufacturer:
STMicroelectronics
Ventron No:
2481056-STP10NK70ZFP
Description:
MOSFET N-CH 700V 8.6A TO-220FP
ECAD Model:
Datasheet:
STP10NK70ZFP

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Specifications
STMicroelectronics STP10NK70ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10NK70ZFP.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP10
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    35W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    35W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    22 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    850m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    8.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    90nC @ 10V
  • Rise Time
    19ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    46 ns
  • Continuous Drain Current (ID)
    4.5A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    8.6A
  • Drain-source On Resistance-Max
    0.85Ohm
  • Drain to Source Breakdown Voltage
    700V
  • Height
    16.4mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STP10NK70ZFP Description The SuperMESH? series is obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 
STP10NK70ZFP Features EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATABILITY
STP10NK70ZFP Applications HIGH CURRENT, HIGH-SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC
STP10NK70ZFP More Descriptions
N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220FP ZENER-PROTECTED SuperMESH POWER MOSFET
Trans MOSFET N-CH 700V 8.6A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 700V 8.6A TO-220FP
STMICROELECTRONICS STP10NK70ZFP Power MOSFET, N Channel, 4.5 A, 700 V, 750 mohm, 10 V, 3.75 V
Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 700V, 8.6A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V
Product Comparison
The three parts on the right have similar specifications to STP10NK70ZFP.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Resistance
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Pulsed Drain Current-Max (IDM)
    Lead Free
    Number of Channels
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    View Compare
  • STP10NK70ZFP
    STP10NK70ZFP
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP10
    3
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    ISOLATED
    22 ns
    N-Channel
    SWITCHING
    850m Ω @ 4.5A, 10V
    4.5V @ 100μA
    2000pF @ 25V
    8.6A Tc
    90nC @ 10V
    19ns
    10V
    ±30V
    19 ns
    46 ns
    4.5A
    3.75V
    TO-220AB
    30V
    8.6A
    0.85Ohm
    700V
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP11NM60FD
    STP11NM60FD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -
    Tube
    FDmesh™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP11N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    -
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    -
    -
    600V
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    450mOhm
    Tin (Sn)
    150°C
    -65°C
    AVALANCHE RATED
    600V
    11A
    44A
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    STP10NK70ZFP vs STP11NM60FD
  • STP12NM50FP
    STP12NM50FP
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    e3
    Active
    1 (Unlimited)
    3
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP12
    3
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    ISOLATED
    20 ns
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    10ns
    10V
    ±30V
    -
    -
    12A
    4V
    TO-220AB
    30V
    -
    -
    500V
    20mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    350mOhm
    Matte Tin (Sn) - annealed
    -
    -
    AVALANCHE RATED
    500V
    12A
    48A
    Lead Free
    1
    400 mJ
    150°C
    -
    -
    -
    -
    -
    STP10NK70ZFP vs STP12NM50FP
  • STP150N3LLH6
    STP150N3LLH6
    STMicroelectronics
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP150
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    -
    TO-220AB
    20V
    -
    -
    30V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    3.3MOhm
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    320A
    Lead Free
    -
    525 mJ
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    STP10NK70ZFP vs STP150N3LLH6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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