STMicroelectronics STP10N105K5
- Part Number:
- STP10N105K5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2481093-STP10N105K5
- Description:
- MOSFET N-CH 1050V 6A TO-220AB
- Datasheet:
- STP10N105K5
STMicroelectronics STP10N105K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10N105K5.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ K5
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTP10
- ConfigurationSingle
- Power Dissipation-Max130W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.3 Ω @ 3A, 10V
- Vgs(th) (Max) @ Id5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds545pF @ 100V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs21.5nC @ 10V
- Drain to Source Voltage (Vdss)1050V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)30V
- Continuous Drain Current (ID)6A
- Drain Current-Max (Abs) (ID)6A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP10N105K5 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 545pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6A.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1050V.Using drive voltage (10V) reduces this device's overall power consumption.
STP10N105K5 Features
a continuous drain current (ID) of 6A
a 1050V drain to source voltage (Vdss)
STP10N105K5 Applications
There are a lot of STMicroelectronics
STP10N105K5 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 545pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6A.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1050V.Using drive voltage (10V) reduces this device's overall power consumption.
STP10N105K5 Features
a continuous drain current (ID) of 6A
a 1050V drain to source voltage (Vdss)
STP10N105K5 Applications
There are a lot of STMicroelectronics
STP10N105K5 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STP10N105K5 More Descriptions
STP10N105K5 Series 1050 V 1.3 Ohm 6 A N-Channel MDmesh K5 Power Mosfet-TO-220AB
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3 Tab) TO-220AB Tube
The three parts on the right have similar specifications to STP10N105K5.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)RoHS StatusLead FreeNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsResistanceTerminal FinishAdditional FeatureVoltage - Rated DCCurrent RatingPin CountNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeThreshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Max Junction Temperature (Tj)HeightLengthWidthRadiation HardeningFall Time (Typ)Turn-Off Delay TimeREACH SVHCView Compare
-
STP10N105K5ACTIVE (Last Updated: 7 months ago)17 WeeksThrough HoleThrough HoleTO-220-3-55°C~150°C TJTubeMDmesh™ K5Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTP10Single130W TcN-Channel1.3 Ω @ 3A, 10V5V @ 100μA545pF @ 100V6A Tc21.5nC @ 10V1050V10V30V6A6AROHS3 CompliantLead Free----------------------------------
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-65°C~150°C TJTubeMDmesh™Active1 (Unlimited)-FET General Purpose PowerMOSFET (Metal Oxide)--STP12-35W TcN-Channel350m Ω @ 6A, 10V5V @ 50μA1000pF @ 25V12A Tc39nC @ 10V-10V±30V12A-ROHS3 CompliantLead Free3SILICONe33350mOhmMatte Tin (Sn) - annealedAVALANCHE RATED500V12A311SingleENHANCEMENT MODE35WISOLATED20 nsSWITCHING10ns4VTO-220AB30V500V48A400 mJ150°C20mm10.4mm4.6mmNo---
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3-55°C~150°C TJTubeMDmesh™ IIActive1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)--STP18N-110W TcN-Channel285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V-10V±25V13A-ROHS3 CompliantLead Free3SILICON-3285mOhm----31-SingleENHANCEMENT MODE110W-12 nsSWITCHING15ns3VTO-220AB25V600V52A--15.75mm10.4mm4.6mmNo25 ns55 nsNo SVHC
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3150°C TJTubeMDmesh™ M2Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)--STP16NSingle110W TcN-Channel320m Ω @ 6A, 10V4V @ 250μA700pF @ 100V12A Tc19nC @ 10V600V10V±25V12A-ROHS3 Compliant--------------ENHANCEMENT MODE-------------------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 September 2023
TL074CN Symbol, Features and Package
Ⅰ. Overview of TL074CNⅡ. 3D Model and symbol of TL074CNⅢ. Footprint of TL074CNⅣ. Technical parametersⅤ. Features of TL074CNⅥ. Application of TL074CNⅦ. Package of TL074CNⅧ. How to optimize the... -
18 September 2023
STM32F103C6T6 Microcontroller:Features, Package and Application
Ⅰ. What is STM32F103C6T6?Ⅱ. 3D Model and pins of STM32F103C6T6Ⅲ. Technical parametersⅣ. Features of STM32F103C6T6Ⅴ. Package of STM32F103C6T6Ⅵ. Application of STM32F103C6T6Ⅶ. Components of the STM32F103C6T6 minimum system boardⅧ.... -
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can... -
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.