STMicroelectronics STP100N10F7

Name: STP100N10F7
Brand: STMicroelectronics
SKU: 2478417-STP100N10F7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP100N10F7

Manufacturer:: STMicroelectronics

Ventron No:: 2478417-STP100N10F7

Description:: MOSFET N CH 100V 80A TO-220

ECAD Model:

Datasheet:: STP100N10F7

Specifications

STMicroelectronics STP100N10F7 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP100N10F7.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
DeepGATE™, STripFET™ VII
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
8MOhm
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Base Part Number
STP100
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
27 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4369pF @ 50V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
61nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
4.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
400 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP100N10F7 Description
These N-channel Power MOSFETs feature STripFETTM F7 technology, which features an improved trench gate structure that reduces internal capacitance and gate charge for faster and more efficient switching. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology.

STP100N10F7 Features
? RDS(on) is one of the lowest on the market.
? Outstanding FoM (figure of merit)
? For EMI immunity, a low Crss/Ciss ratio is required.
? Avalanche toughness is high.

STP100N10F7 Applications
Switching applications

STP100N10F7 More Descriptions

N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
STP100N10F7 STMicroelectronics Trans MOSFET N-CH 100V 80A 3-Pin(3 Tab) TO-220AB Tube RoHS
Mosfet, N-Ch, 100V, 80A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0068Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Stmicroelectronics STP100N10F7
Power Field-Effect Transistor, 80A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP100N10F7.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

Voltage - Rated DC

Current Rating

Pin Count

Pulsed Drain Current-Max (IDM)

JESD-30 Code

Drain-source On Resistance-Max

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP100N10F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

13 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

Active

1 (Unlimited)

3

EAR99

8MOhm

FET General Purpose Powers

MOSFET (Metal Oxide)

STP100

1

150W Tc

Single

ENHANCEMENT MODE

150W

DRAIN

27 ns

N-Channel

SWITCHING

8m Ω @ 40A, 10V

4.5V @ 250μA

4369pF @ 50V

80A Tc

61nC @ 10V

40ns

10V

±20V

16 ns

46 ns

80A

4.5V

TO-220AB

20V

100V

400 mJ

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP11NM60FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-

Tube

FDmesh™

Active

1 (Unlimited)

3

EAR99

450mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STP11N

1

160W Tc

Single

ENHANCEMENT MODE

160W

-

20 ns

N-Channel

SWITCHING

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

16ns

10V

±30V

15 ns

-

11A

-

TO-220AB

30V

600V

-

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

e3

Tin (Sn)

150°C

-65°C

AVALANCHE RATED

600V

11A

3

44A

-

-

-

-

STP100N10F7 vs STP11NM60FD
STP180NS04ZC

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

Not For New Designs

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP180

1

330W Tc

Single

ENHANCEMENT MODE

300W

-

-

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

-

120A

-

TO-220AB

20V

33V

-

-

-

-

-

No

ROHS3 Compliant

-

e3

Matte Tin (Sn)

-

-

-

-

-

3

480A

R-PSFM-T3

0.0042Ohm

-

-

STP100N10F7 vs STP180NS04ZC
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

-

110W Tc

-

ENHANCEMENT MODE

-

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

Single

600V

STP100N10F7 vs STP16N60M2