STMicroelectronics STGWT20H65FB
- Part Number:
- STGWT20H65FB
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494359-STGWT20H65FB
- Description:
- IGBT 650V 40A 168W TO3P
- ECAD Model:
-
- Datasheet:
- STGWT20H65FB
STMicroelectronics STGWT20H65FB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWT20H65FB.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time32 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.756003g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation168W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGWT20
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max168W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current40A
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.55V
- Test Condition400V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
- IGBT TypeTrench Field Stop
- Gate Charge120nC
- Current - Collector Pulsed (Icm)80A
- Td (on/off) @ 25°C30ns/139ns
- Switching Energy77μJ (on), 170μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max7V
- RoHS StatusROHS3 Compliant
STGWT20H65FB Description
This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The component is a new HB series IGBT, which offers the best conduction and switching loss trade-off for any frequency converter's efficiency. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGWT20H65FB Features
TJ = 175 °C is the maximum junction temperature.
succession of fast switching
reduce the tail current
IC = 20 A, VCE(sat) = 1.55 V (typ. ),
distribution of tight parameters
Paralleling safely
a minimal heat resistance
STGWT20H65FB Applications
Switching applications
This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The component is a new HB series IGBT, which offers the best conduction and switching loss trade-off for any frequency converter's efficiency. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGWT20H65FB Features
TJ = 175 °C is the maximum junction temperature.
succession of fast switching
reduce the tail current
IC = 20 A, VCE(sat) = 1.55 V (typ. ),
distribution of tight parameters
Paralleling safely
a minimal heat resistance
STGWT20H65FB Applications
Switching applications
STGWT20H65FB More Descriptions
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
Trans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
IGBT, SINGLE, 650V, 40A, TO-3P
Short-circuit rugged IGBT, TO-3P, TubeSTMicroelectronics SCT
French Electronic Distributor since 1988
Insulated Gate Bipolar Transistors
IGBT, SINGLE, 650V, 40A, TO-3P; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 168W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HB Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
Trans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
IGBT, SINGLE, 650V, 40A, TO-3P
Short-circuit rugged IGBT, TO-3P, TubeSTMicroelectronics SCT
French Electronic Distributor since 1988
Insulated Gate Bipolar Transistors
IGBT, SINGLE, 650V, 40A, TO-3P; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 168W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HB Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
The three parts on the right have similar specifications to STGWT20H65FB.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusSeriesReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power DissipationHeightLengthWidthRadiation HardeningREACH SVHCLead FreeView Compare
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STGWT20H65FBACTIVE (Last Updated: 7 months ago)32 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-336.756003g-55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors168WNOT SPECIFIEDNOT SPECIFIEDSTGWT20SingleStandard168WN-CHANNEL650V40A650V1.55V400V, 20A, 10 Ω, 15V2V @ 15V, 20ATrench Field Stop120nC80A30ns/139ns77μJ (on), 170μJ (off)20V7VROHS3 Compliant------------ -
ACTIVE (Last Updated: 8 months ago)30 Weeks-Through HoleTO-247-3---55°C~175°C TJTubeActive1 (Unlimited)-----STGW10-Standard115W-----400V, 10A, 22 Ω, 15V2V @ 15V, 10ATrench Field Stop28nC40A19ns/91ns120μJ (on), 270μJ (off)--ROHS3 CompliantM96ns650V20A-------
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-20 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors283W--STGW40SingleStandard-N-CHANNEL600V80A600V2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A-/208ns411μJ (off)20V-ROHS3 Compliant----283W20.15mm15.75mm5.15mmNo--
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ACTIVE (Last Updated: 8 months ago)30 WeeksThrough HoleThrough HoleTO-247-3338.000013g-55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors468WNOT SPECIFIEDNOT SPECIFIEDSTGW40SingleStandard468WN-CHANNEL1.2kV80A1.2kV1.85V600V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop125nC160A35ns/140ns1.5mJ (on), 2.25mJ (off)20V7VROHS3 Compliant-355 ns1200V------No SVHCLead Free
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