STMicroelectronics STGW39NC60VD
- Part Number:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3587214-STGW39NC60VD
- Description:
- IGBT 600V 80A 250W TO247
- Datasheet:
- STGW39NC60VD
STMicroelectronics STGW39NC60VD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW39NC60VD.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation250W
- Current Rating40A
- Base Part NumberSTGW39
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250W
- Case ConnectionISOLATED
- Input TypeStandard
- Turn On Delay Time33 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time13ns
- Drain to Source Voltage (Vdss)600V
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time178 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current80A
- Reverse Recovery Time45ns
- Continuous Drain Current (ID)40A
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.8V
- Turn On Time46 ns
- Test Condition390V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
- Turn Off Time-Nom (toff)366 ns
- Gate Charge126nC
- Current - Collector Pulsed (Icm)220A
- Td (on/off) @ 25°C33ns/178ns
- Switching Energy333μJ (on), 537μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGW39NC60VD Description
This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior.
STGW39NC60VD Features Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra-fast free-wheeling diode
STGW39NC60VD Applications High-frequency inverters UPS Motor drivers Induction heating
STGW39NC60VD Features Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra-fast free-wheeling diode
STGW39NC60VD Applications High-frequency inverters UPS Motor drivers Induction heating
STGW39NC60VD More Descriptions
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3 Tab) TO-247 Tube
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
Igbt, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGW39NC60VD
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
Igbt, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGW39NC60VD
The three parts on the right have similar specifications to STGW39NC60VD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeContinuous Drain Current (ID)JEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeIGBT TypeWeightTerminal FinishAdditional FeatureContinuous Collector CurrentView Compare
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STGW39NC60VDACTIVE (Last Updated: 7 months ago)8 WeeksTinThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubePowerMESH™e3Active1 (Unlimited)3EAR99Insulated Gate BIP Transistors600V250W40ASTGW3931Single250WISOLATEDStandard33 nsPOWER CONTROL13ns600VN-CHANNEL178 ns600V80A45ns40ATO-247AC600V1.8V46 ns390V, 30A, 10 Ω, 15V2.4V @ 15V, 30A366 ns126nC220A33ns/178ns333μJ (on), 537μJ (off)20V5.75V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free------
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-20 Weeks-Through HoleThrough HoleTO-247-33--55°C~175°C TJTube--Active1 (Unlimited)-EAR99Insulated Gate BIP Transistors-283W-STGW40--Single283W-Standard----N-CHANNEL-600V80A---600V2.35V-400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-226nC160A-/208ns411μJ (off)20V-20.15mm15.75mm5.15mm-NoROHS3 Compliant-Trench Field Stop----
-
-20 Weeks-Through HoleThrough HoleTO-247-33--55°C~175°C TJTube--Active1 (Unlimited)-EAR99--283W-STGW40--Single283W-Standard------600V80A41ns--600V2.35V-400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-226nC160A52ns/208ns456μJ (on), 411μJ (off)--20.15mm15.75mm5.15mm-NoROHS3 CompliantLead FreeTrench Field Stop----
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ACTIVE (Last Updated: 8 months ago)8 Weeks-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubePowerMESH™e3Active1 (Unlimited)3EAR99Insulated Gate BIP Transistors600V200W30ASTGW2031Single200W-Standard31 nsPOWER CONTROL11.5ns-N-CHANNEL100 ns600V60A44ns--600V2.5V42.5 ns390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A280 ns100nC150A31ns/100ns220μJ (on), 330μJ (off)20V5.75V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free-38.000013gTin (Sn)ULTRA FAST30A
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