STGW39NC60VD

STMicroelectronics STGW39NC60VD

Part Number:
STGW39NC60VD
Manufacturer:
STMicroelectronics
Ventron No:
3587214-STGW39NC60VD
Description:
IGBT 600V 80A 250W TO247
ECAD Model:
Datasheet:
STGW39NC60VD

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Specifications
STMicroelectronics STGW39NC60VD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW39NC60VD.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    250W
  • Current Rating
    40A
  • Base Part Number
    STGW39
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    250W
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Turn On Delay Time
    33 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    13ns
  • Drain to Source Voltage (Vdss)
    600V
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    178 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    45ns
  • Continuous Drain Current (ID)
    40A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.8V
  • Turn On Time
    46 ns
  • Test Condition
    390V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    366 ns
  • Gate Charge
    126nC
  • Current - Collector Pulsed (Icm)
    220A
  • Td (on/off) @ 25°C
    33ns/178ns
  • Switching Energy
    333μJ (on), 537μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGW39NC60VD Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior.

STGW39NC60VD Features Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra-fast free-wheeling diode

STGW39NC60VD Applications High-frequency inverters UPS Motor drivers Induction heating

STGW39NC60VD More Descriptions
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3 Tab) TO-247 Tube
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
Igbt, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGW39NC60VD
Product Comparison
The three parts on the right have similar specifications to STGW39NC60VD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    IGBT Type
    Weight
    Terminal Finish
    Additional Feature
    Continuous Collector Current
    View Compare
  • STGW39NC60VD
    STGW39NC60VD
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    600V
    250W
    40A
    STGW39
    3
    1
    Single
    250W
    ISOLATED
    Standard
    33 ns
    POWER CONTROL
    13ns
    600V
    N-CHANNEL
    178 ns
    600V
    80A
    45ns
    40A
    TO-247AC
    600V
    1.8V
    46 ns
    390V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    366 ns
    126nC
    220A
    33ns/178ns
    333μJ (on), 537μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • STGW40V60DLF
    -
    20 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Insulated Gate BIP Transistors
    -
    283W
    -
    STGW40
    -
    -
    Single
    283W
    -
    Standard
    -
    -
    -
    -
    N-CHANNEL
    -
    600V
    80A
    -
    -
    -
    600V
    2.35V
    -
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    -
    226nC
    160A
    -/208ns
    411μJ (off)
    20V
    -
    20.15mm
    15.75mm
    5.15mm
    -
    No
    ROHS3 Compliant
    -
    Trench Field Stop
    -
    -
    -
    -
  • STGW40V60DF
    -
    20 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    283W
    -
    STGW40
    -
    -
    Single
    283W
    -
    Standard
    -
    -
    -
    -
    -
    -
    600V
    80A
    41ns
    -
    -
    600V
    2.35V
    -
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    -
    226nC
    160A
    52ns/208ns
    456μJ (on), 411μJ (off)
    -
    -
    20.15mm
    15.75mm
    5.15mm
    -
    No
    ROHS3 Compliant
    Lead Free
    Trench Field Stop
    -
    -
    -
    -
  • STGW20NC60VD
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    600V
    200W
    30A
    STGW20
    3
    1
    Single
    200W
    -
    Standard
    31 ns
    POWER CONTROL
    11.5ns
    -
    N-CHANNEL
    100 ns
    600V
    60A
    44ns
    -
    -
    600V
    2.5V
    42.5 ns
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    280 ns
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20V
    5.75V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    38.000013g
    Tin (Sn)
    ULTRA FAST
    30A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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