ON Semiconductor NTD5803NT4G

Name: NTD5803NT4G
Brand: ON Semiconductor
SKU: 3554552-NTD5803NT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD5803NT4G

Manufacturer:: ON Semiconductor

Ventron No:: 3554552-NTD5803NT4G

Description:: MOSFET N-CH 40V 76A DPAK

ECAD Model:

Datasheet:: NTD5803NT4G

Specifications

ON Semiconductor NTD5803NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD5803NT4G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PDSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
83W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3.22pF @ 25V
Current - Continuous Drain (Id) @ 25°C
76A Tc
Gate Charge (Qg) (Max) @ Vgs
51nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
76A
Drain-source On Resistance-Max
0.0072Ohm
Pulsed Drain Current-Max (IDM)
228A
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
240 mJ
RoHS Status
ROHS3 Compliant

Description

NTD5803NT4G Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.The maximum input capacitance of this device is 3.22pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 76A.There is no pulsed drain current maximum for this device based on its rated peak drain current 228A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.

NTD5803NT4G Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 228A.
a 40V drain to source voltage (Vdss)

NTD5803NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD5803NT4G applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

NTD5803NT4G More Descriptions

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 76A Tc 76A 83W 6.6ns
Power MOSFET 40V 75A 7.2 mOhm Single N-Channel DPAK
The NTD58xxN series are 40V Trench N-Channel power MOSFET ideal for use in Automotive LCD Backlight LED drivers and power supply secondaries where RDS(on) performance and industry standard packaging are important.

Product Comparison

The three parts on the right have similar specifications to NTD5803NT4G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Number of Pins

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

Lead Free

Mount

Voltage - Rated DC

Current Rating

View Compare
NTD5803NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PDSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

83W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

7.2m Ω @ 50A, 10V

3.5V @ 250μA

3.22pF @ 25V

76A Tc

51nC @ 10V

40V

5V 10V

±20V

76A

0.0072Ohm

228A

40V

240 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD5807NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

-

GULL WING

260

-

40

4

R-PSSO-G2

-

1

-

33W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

31m Ω @ 5A, 10V

2.5V @ 250μA

603pF @ 25V

23A Tc

20nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 5 days ago)

4

2008

EAR99

FET General Purpose Power

Single

33W

11.2 ns

20.4ns

2 ns

15.6 ns

23A

20V

40V

2.38mm

6.73mm

6.22mm

No

Lead Free

-

-

-

NTD5803NT4G vs NTD5807NT4G
NTD50N03R-035

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

1.5W Ta 50W Tc

-

-

N-Channel

-

12m Ω @ 30A, 11.5V

2V @ 250μA

750pF @ 12V

7.8A Ta 45A Tc

15nC @ 11.5V

-

4.5V 11.5V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

-

2007

-

-

Single

1.5W

-

84ns

84 ns

11.2 ns

45A

20V

25V

-

-

-

-

Contains Lead

Through Hole

25V

45A

NTD5803NT4G vs NTD50N03R-035
NTD5865N-1G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

THROUGH-HOLE

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

71W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

18m Ω @ 20A, 10V

4V @ 250μA

1.261pF @ 25V

43A Tc

23nC @ 10V

60V

10V

±20V

38A

0.018Ohm

137A

60V

36 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD5803NT4G vs NTD5865N-1G