ON Semiconductor NTD5865NL-1G

NTD5865NL-1G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 36 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 46A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [26 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NTD5865NL-1G Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 26 ns


NTD5865NL-1G Applications
There are a lot of ON Semiconductor
NTD5865NL-1G applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies