ON Semiconductor NTD5865NT4G
- Part Number:
- NTD5865NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2491088-NTD5865NT4G
- Description:
- MOSFET N-CH 60V 43A DPAK
- ECAD Model:
-
- Datasheet:
- NTD5865NT4G
ON Semiconductor NTD5865NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD5865NT4G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageDPAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max71W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.261pF @ 25V
- Current - Continuous Drain (Id) @ 25°C43A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTD5865NT4G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.261pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
NTD5865NT4G Features
a 60V drain to source voltage (Vdss)
NTD5865NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD5865NT4G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.261pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
NTD5865NT4G Features
a 60V drain to source voltage (Vdss)
NTD5865NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD5865NT4G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTD5865NT4G More Descriptions
NTD5865NT4G N-channel MOSFET Transistor, 38 A, 60 V, 3-Pin DPAK | ON Semiconductor NTD5865NT4G
Power MOSFET 60V 43A 18 mOhm Single N-Channel DPAK
N-Channel 60 V 18 mOhm 52 W Surface Mount Power MosFet -TO-252-3
Power MOSFET 60V 43A 18 mOhm Single N-Channel DPAK
N-Channel 60 V 18 mOhm 52 W Surface Mount Power MosFet -TO-252-3
The three parts on the right have similar specifications to NTD5865NT4G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusLifecycle StatusSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningLead FreeMountVoltage - Rated DCCurrent RatingResistanceAvalanche Energy Rating (Eas)View Compare
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NTD5865NT4GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63DPAK-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)71W TcN-Channel18mOhm @ 20A, 10V4V @ 250μA1.261pF @ 25V43A Tc23nC @ 10V60V10V±20VROHS3 Compliant---------------------------------------- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)33W TcN-Channel31m Ω @ 5A, 10V2.5V @ 250μA603pF @ 25V23A Tc20nC @ 10V-4.5V 10V±20VRoHS CompliantLAST SHIPMENTS (Last Updated: 5 days ago)YES4SILICON2008e3yes2EAR99Tin (Sn)FET General Purpose PowerGULL WING260404R-PSSO-G21SingleENHANCEMENT MODE33WDRAIN11.2 nsSWITCHING20.4ns2 ns15.6 ns23A20V40V2.38mm6.73mm6.22mmNoLead Free-----
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Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.5W Ta 50W TcN-Channel12m Ω @ 30A, 11.5V2V @ 250μA750pF @ 12V7.8A Ta 45A Tc15nC @ 11.5V-4.5V 11.5V±20VNon-RoHS Compliant----2007------------Single-1.5W---84ns84 ns11.2 ns45A20V25V----Contains LeadThrough Hole25V45A--
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)71W TcN-Channel16m Ω @ 20A, 10V2V @ 250μA1400pF @ 25V46A Tc29nC @ 10V-4.5V 10V±20VRoHS CompliantLAST SHIPMENTS (Last Updated: 1 day ago)NO4SILICON2010e3yes3EAR99Tin (Sn)FET General Purpose Power---4R-PSIP-T31SingleENHANCEMENT MODE52WDRAIN8.4 nsSWITCHING12.4ns4.4 ns26 ns46A20V60V7.62mm6.73mm2.38mmNoLead Free---16MOhm36 mJ
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