ON Semiconductor NTD5865N-1G

NTD5865N-1G Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 36 mJ.The maximum input capacitance of this device is 1.261pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 38A.There is no pulsed drain current maximum for this device based on its rated peak drain current 137A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

NTD5865N-1G Features
the avalanche energy rating (Eas) is 36 mJ
based on its rated peak drain current 137A.
a 60V drain to source voltage (Vdss)


NTD5865N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD5865N-1G applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,