ON Semiconductor NTD50N03R

Name: NTD50N03R
Brand: ON Semiconductor
SKU: 3071154-NTD50N03R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD50N03R

Manufacturer:: ON Semiconductor

Ventron No:: 3071154-NTD50N03R

Description:: MOSFET N-CH 25V 7.8A DPAK

ECAD Model:

Datasheet:: NTD50N03R

Specifications

ON Semiconductor NTD50N03R technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD50N03R.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Current Rating
45A
Pin Count
3
Power Dissipation-Max
1.5W Ta 50W Tc
Element Configuration
Single
Power Dissipation
50W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
12m Ω @ 30A, 11.5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 12V
Current - Continuous Drain (Id) @ 25°C
7.8A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 11.5V
Rise Time
84ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
45A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

NTD50N03R Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 750pF @ 12V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 45A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 11.5V) reduces this device's overall power consumption.

NTD50N03R Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 15 ns

NTD50N03R Applications
There are a lot of ON Semiconductor
NTD50N03R applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

NTD50N03R More Descriptions

MOSFETs- Power and Small Signal 30V 68A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 25V 7.8A/45A DPAK
RES SMD 82K OHM 1% 1/4W 1206

Product Comparison

The three parts on the right have similar specifications to NTD50N03R.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated DC

Technology

Reach Compliance Code

Current Rating

Pin Count

Power Dissipation-Max

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Lifecycle Status

Surface Mount

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Operating Mode

Case Connection

Turn On Delay Time

Transistor Application

Height

Length

Width

Radiation Hardening

Terminal Position

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
NTD50N03R

ON Semiconductor

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tube

2007

Obsolete

1 (Unlimited)

EAR99

25V

MOSFET (Metal Oxide)

not_compliant

45A

3

1.5W Ta 50W Tc

Single

50W

N-Channel

12m Ω @ 30A, 11.5V

2V @ 250μA

750pF @ 12V

7.8A Ta 45A Tc

15nC @ 11.5V

84ns

4.5V 11.5V

±20V

4 ns

15 ns

45A

20V

25V

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD5862N-1G

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

115W Tc

-

-

N-Channel

5.7mOhm @ 45A, 10V

4V @ 250μA

6pF @ 25V

98A Tc

82nC @ 10V

-

10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

DPAK

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD50N03R vs NTD5862N-1G
NTD5807NT4G

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tape & Reel (TR)

2008

Obsolete

1 (Unlimited)

EAR99

-

MOSFET (Metal Oxide)

-

-

4

33W Tc

Single

33W

N-Channel

31m Ω @ 5A, 10V

2.5V @ 250μA

603pF @ 25V

23A Tc

20nC @ 10V

20.4ns

4.5V 10V

±20V

2 ns

15.6 ns

23A

20V

40V

RoHS Compliant

Lead Free

-

-

LAST SHIPMENTS (Last Updated: 5 days ago)

YES

4

SILICON

e3

yes

2

Tin (Sn)

FET General Purpose Power

GULL WING

260

40

R-PSSO-G2

1

ENHANCEMENT MODE

DRAIN

11.2 ns

SWITCHING

2.38mm

6.73mm

6.22mm

No

-

-

-

-

-

-

-

-

NTD50N03R vs NTD5807NT4G
NTD5865N-1G

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

3

71W Tc

-

-

N-Channel

18m Ω @ 20A, 10V

4V @ 250μA

1.261pF @ 25V

43A Tc

23nC @ 10V

-

10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

-

60V

-

NO

-

SILICON

e3

yes

3

MATTE TIN

-

THROUGH-HOLE

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

1

ENHANCEMENT MODE

DRAIN

-

SWITCHING

-

-

-

-

SINGLE

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

38A

0.018Ohm

137A

60V

36 mJ

NTD50N03R vs NTD5865N-1G

Certification

Related parts for NTD50N03R

NTD5803NT4G

ON Semiconductor

MOSFET N-CH 40V 76A DPAK
NTD5862N-1G

ON Semiconductor

MOSFET N-CH 60V 90A DPAK
NTD50N03R

ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK
NTD5804NT4G

ON Semiconductor

MOSFET N-CH 40V 69A DPAK
NTD5807NT4G

ON Semiconductor

MOSFET N-CH 40V 23A DPAK
NTD50N03R-035

ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK
NTD50N03R-35G

ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK
NTD5865N-1G

ON Semiconductor

MOSFET N-CH 60V 43A DPAK
NTD5865NT4G

ON Semiconductor

MOSFET N-CH 60V 43A DPAK
NTD5865NL-1G

ON Semiconductor

MOSFET N-CH 60V 46A IPAK

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NTD50N0~~(9)~~
NTD50N~~(9)~~
NTD50~~(9)~~
NTD5~~(55)~~
NTD~~(98)~~

Part Number	Manufacturers	Description	Stock	Price
NTD50N03R DISTI #NTD50N03R	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK RoHS: Not Compliant	0
NTD50N03R-001 DISTI #NTD50N03R-001	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK RoHS: Not Compliant	0
NTD50N03R-035 DISTI #NTD50N03R-035	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK RoHS: Not Compliant	0
NTD50N03R-1G DISTI #NTD50N03R-1G	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK RoHS: Compliant	0
NTD50N03R-35G DISTI #NTD50N03R-35G	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK RoHS: Compliant	0
NTD50N03RG DISTI #NTD50N03RG	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK RoHS: Compliant	0
NTD50N03RT4 DISTI #NTD50N03RT4	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK RoHS: Not Compliant	0
NTD50N03RT4G DISTI #NTD50N03RT4G	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK RoHS: Compliant	0
NTD50N03RT4 DISTI #NTD50N03RT4	ON Semiconductor	RoHS: Not Compliant	2500	1 $0.13 25 $0.12 100 $0.12 500 $0.11 1000 $0.11
NTD50N03R-35G DISTI #NTD50N03R-35G	ON Semiconductor	RoHS: Not Compliant	35200	1 $0.11 25 $0.11 100 $0.1 500 $0.1 1000 $0.09
NTD50N03R-1G DISTI #NTD50N03R-1G	ON Semiconductor	RoHS: Not Compliant	5609	1 $0.13 25 $0.12 100 $0.12 500 $0.11 1000 $0.11
NTD50N03RT4G DISTI #NTD50N03RT4G	ON Semiconductor	RoHS: Not Compliant	107349	1 $0.11 25 $0.11 100 $0.1 500 $0.1 1000 $0.09
NTD50N03RG DISTI #NTD50N03RG	ON Semiconductor	RoHS: Not Compliant	3559	1 $0.23 25 $0.21 100 $0.2 500 $0.19 1000 $0.18
NTD50N03RT4G DISTI #NTD50N03RT4G	ON Semiconductor	MOSFET 25V 45A N-Channel RoHS: Compliant	0
NTD50N03RG DISTI #NTD50N03RG	ON Semiconductor	MOSFET 25V 45A N-Channel RoHS: Compliant	0
NTD50N03R-1G DISTI #NTD50N03R-1G	ON Semiconductor	MOSFET 25V 45A N-Channel RoHS: Compliant	0
NTD50N03R-35G DISTI #NTD50N03R-35G	ON Semiconductor	MOSFET 25V 45A N-Channel RoHS: Compliant	0
NTD50N03RT4 DISTI #NTD50N03RT4	ON Semiconductor	MOSFET 25V 45A N-Channel RoHS: Not Compliant	0

ON Semiconductor NTD50N03R

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