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NTD5804NT4G

ON Semiconductor NTD5804NT4G

Part Number:
NTD5804NT4G
Manufacturer:
ON Semiconductor
Ventron No:
2852910-NTD5804NT4G
Description:
MOSFET N-CH 40V 69A DPAK
ECAD Model:
Datasheet:
NTD5804NT4G

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Specifications
ON Semiconductor NTD5804NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD5804NT4G.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 3 days ago)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    71W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    71W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2850pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    69A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    45nC @ 10V
  • Rise Time
    18.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.9 ns
  • Turn-Off Delay Time
    26.8 ns
  • Continuous Drain Current (ID)
    69A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0085Ohm
  • Drain to Source Breakdown Voltage
    40V
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
NTD5804NT4G    Description    Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.  
NTD5804NT4G       Features
? Low RDS(on) ? High Current Capability ? Avalanche Energy Specified ? NTDV, STDV and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant
NTD5804NT4G      Applications
? CCFL Backlight ? DC Motor Control ? Class D Amplifier ? Power Supply Secondary Side Synchronous Rectification
NTD5804NT4G More Descriptions
Power MOSFET 40V 69A 8.5 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 40V 69A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
MOSFET N-Channel 40V 69A DPAK | ON Semiconductor NTD5804NT4G
MOSFET, N CH, 40V, 0.0057OHM, 69A, TO-25
MOSFET NFET DPAK 40V 69A 8.5mOhm
40 V 69 A Single N-Channel DPAK 8.5 mOhm RDS(on)
Power Field-Effect Transistor, 69A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 40V, 69A, TO-252-3;
Product Comparison
The three parts on the right have similar specifications to NTD5804NT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Voltage - Rated DC
    Current Rating
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • NTD5804NT4G
    NTD5804NT4G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 3 days ago)
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    4
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    1997
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    71W Tc
    Single
    ENHANCEMENT MODE
    71W
    DRAIN
    11.8 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 30A, 10V
    3.5V @ 250μA
    2850pF @ 25V
    69A Tc
    45nC @ 10V
    18.7ns
    5V 10V
    ±20V
    5.9 ns
    26.8 ns
    69A
    2V
    20V
    0.0085Ohm
    40V
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD50N03R-035
    NTD50N03R-035
    ON Semiconductor
    -
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2007
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1.5W Ta 50W Tc
    Single
    -
    1.5W
    -
    -
    N-Channel
    -
    12m Ω @ 30A, 11.5V
    2V @ 250μA
    750pF @ 12V
    7.8A Ta 45A Tc
    15nC @ 11.5V
    84ns
    4.5V 11.5V
    ±20V
    84 ns
    11.2 ns
    45A
    -
    20V
    -
    25V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    25V
    45A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTD5804NT4G vs NTD50N03R-035
  • NTD50N03R-35G
    NTD50N03R-35G
    ON Semiconductor
    -
    Through Hole
    TO-251-3 Stub Leads, IPak
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e3
    no
    Obsolete
    1 (Unlimited)
    3
    -
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    -
    3
    R-PSIP-T3
    1
    1.5W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    12m Ω @ 30A, 11.5V
    2V @ 250μA
    750pF @ 12V
    7.8A Ta 45A Tc
    15nC @ 11.5V
    -
    4.5V 11.5V
    ±20V
    -
    -
    -
    -
    -
    0.014Ohm
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    25V
    7.8A
    180A
    25V
    20 mJ
    NTD5804NT4G vs NTD50N03R-35G
  • NTD5865N-1G
    NTD5865N-1G
    ON Semiconductor
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    THROUGH-HOLE
    3
    R-PSIP-T3
    1
    71W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    18m Ω @ 20A, 10V
    4V @ 250μA
    1.261pF @ 25V
    43A Tc
    23nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    0.018Ohm
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    60V
    38A
    137A
    60V
    36 mJ
    NTD5804NT4G vs NTD5865N-1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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