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NTD5862N-1G

ON Semiconductor NTD5862N-1G

Part Number:
NTD5862N-1G
Manufacturer:
ON Semiconductor
Ventron No:
3071409-NTD5862N-1G
Description:
MOSFET N-CH 60V 90A DPAK
ECAD Model:
Datasheet:
NTD5862N-1G

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Specifications
ON Semiconductor NTD5862N-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD5862N-1G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Supplier Device Package
    DPAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    115W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5.7mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    98A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    82nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
NTD5862N-1G Overview
A device's maximal input capacitance is 6pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

NTD5862N-1G Features
a 60V drain to source voltage (Vdss)


NTD5862N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD5862N-1G applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NTD5862N-1G More Descriptions
NTD5862N-1G N-channel MOSFET Transistor, 98 A, 60 V, 3-Pin DPAK | ON Semiconductor NTD5862N-1G
Tube Surface Mount N-Channel Single Mosfet Transistor 98A Tc 98A 115W 60ns
Single N-Channel Power MOSFET 60V, 98A, 5.7mΩ
Product Comparison
The three parts on the right have similar specifications to NTD5862N-1G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Lifecycle Status
    Surface Mount
    Number of Pins
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Resistance
    Avalanche Energy Rating (Eas)
    View Compare
  • NTD5862N-1G
    NTD5862N-1G
    ON Semiconductor
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    DPAK
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    115W Tc
    N-Channel
    5.7mOhm @ 45A, 10V
    4V @ 250μA
    6pF @ 25V
    98A Tc
    82nC @ 10V
    60V
    10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD5804NT4G
    NTD5804NT4G
    ON Semiconductor
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    71W Tc
    N-Channel
    8.5m Ω @ 30A, 10V
    3.5V @ 250μA
    2850pF @ 25V
    69A Tc
    45nC @ 10V
    -
    5V 10V
    ±20V
    RoHS Compliant
    LAST SHIPMENTS (Last Updated: 3 days ago)
    YES
    4
    SILICON
    1997
    e3
    yes
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    GULL WING
    4
    R-PSSO-G2
    1
    Single
    ENHANCEMENT MODE
    71W
    DRAIN
    11.8 ns
    SWITCHING
    18.7ns
    5.9 ns
    26.8 ns
    69A
    2V
    20V
    0.0085Ohm
    40V
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    Lead Free
    -
    -
    NTD5862N-1G vs NTD5804NT4G
  • NTD5865NT4G
    NTD5865NT4G
    ON Semiconductor
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    DPAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    71W Tc
    N-Channel
    18mOhm @ 20A, 10V
    4V @ 250μA
    1.261pF @ 25V
    43A Tc
    23nC @ 10V
    60V
    10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTD5862N-1G vs NTD5865NT4G
  • NTD5865NL-1G
    NTD5865NL-1G
    ON Semiconductor
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    71W Tc
    N-Channel
    16m Ω @ 20A, 10V
    2V @ 250μA
    1400pF @ 25V
    46A Tc
    29nC @ 10V
    -
    4.5V 10V
    ±20V
    RoHS Compliant
    LAST SHIPMENTS (Last Updated: 1 day ago)
    NO
    4
    SILICON
    2010
    e3
    yes
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    -
    4
    R-PSIP-T3
    1
    Single
    ENHANCEMENT MODE
    52W
    DRAIN
    8.4 ns
    SWITCHING
    12.4ns
    4.4 ns
    26 ns
    46A
    -
    20V
    -
    60V
    7.62mm
    6.73mm
    2.38mm
    -
    No
    Lead Free
    16MOhm
    36 mJ
    NTD5862N-1G vs NTD5865NL-1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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