ON Semiconductor NTD50N03R-35G

Name: NTD50N03R-35G
Brand: ON Semiconductor
SKU: 2851989-NTD50N03R-35G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD50N03R-35G

Manufacturer:: ON Semiconductor

Ventron No:: 2851989-NTD50N03R-35G

Description:: MOSFET N-CH 25V 7.8A IPAK

ECAD Model:

Datasheet:: NTD50N03R-35G

Specifications

ON Semiconductor NTD50N03R-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD50N03R-35G.

Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.5W Ta 50W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 30A, 11.5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 12V
Current - Continuous Drain (Id) @ 25°C
7.8A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 11.5V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
7.8A
Drain-source On Resistance-Max
0.014Ohm
Pulsed Drain Current-Max (IDM)
180A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
20 mJ
RoHS Status
ROHS3 Compliant

Description

NTD50N03R-35G Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.The maximum input capacitance of this device is 750pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 7.8A.There is no pulsed drain current maximum for this device based on its rated peak drain current 180A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 11.5V), this device helps reduce its power consumption.

NTD50N03R-35G Features
the avalanche energy rating (Eas) is 20 mJ
based on its rated peak drain current 180A.
a 25V drain to source voltage (Vdss)

NTD50N03R-35G Applications
There are a lot of Rochester Electronics, LLC
NTD50N03R-35G applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

NTD50N03R-35G More Descriptions

Tube Through Hole N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 4ns
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
MOSFET, N, 25V, I-PAK; Transistor type:Enhancement; Voltage, Vds typ:25V; Current, Id cont:45A; Resistance, Rds on:0.0117R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1.7V; Case style:I-PAK; Power, Pd:50W; Transistor RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD50N03R-35G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Published

ECCN Code

Voltage - Rated DC

Reach Compliance Code

Current Rating

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Lifecycle Status

Number of Pins

Subcategory

Terminal Form

Turn On Delay Time

Threshold Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
NTD50N03R-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

no

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.5W Ta 50W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

12m Ω @ 30A, 11.5V

2V @ 250μA

750pF @ 12V

7.8A Ta 45A Tc

15nC @ 11.5V

25V

4.5V 11.5V

±20V

7.8A

0.014Ohm

180A

25V

20 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD50N03R

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

3

-

-

-

-

1.5W Ta 50W Tc

-

-

N-Channel

-

12m Ω @ 30A, 11.5V

2V @ 250μA

750pF @ 12V

7.8A Ta 45A Tc

15nC @ 11.5V

-

4.5V 11.5V

±20V

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

2007

EAR99

25V

not_compliant

45A

Single

50W

84ns

4 ns

15 ns

45A

20V

25V

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

NTD50N03R-35G vs NTD50N03R
NTD5804NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

4

R-PSSO-G2

-

1

-

71W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

8.5m Ω @ 30A, 10V

3.5V @ 250μA

2850pF @ 25V

69A Tc

45nC @ 10V

-

5V 10V

±20V

-

0.0085Ohm

-

-

-

RoHS Compliant

-

1997

EAR99

-

-

-

Single

71W

18.7ns

5.9 ns

26.8 ns

69A

20V

40V

Lead Free

LAST SHIPMENTS (Last Updated: 3 days ago)

4

FET General Purpose Power

GULL WING

11.8 ns

2V

2.38mm

6.73mm

6.22mm

No SVHC

No

NTD50N03R-35G vs NTD5804NT4G
NTD5807NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

-

260

40

4

R-PSSO-G2

-

1

-

33W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

31m Ω @ 5A, 10V

2.5V @ 250μA

603pF @ 25V

23A Tc

20nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

RoHS Compliant

-

2008

EAR99

-

-

-

Single

33W

20.4ns

2 ns

15.6 ns

23A

20V

40V

Lead Free

LAST SHIPMENTS (Last Updated: 5 days ago)

4

FET General Purpose Power

GULL WING

11.2 ns

-

2.38mm

6.73mm

6.22mm

-

No

NTD50N03R-35G vs NTD5807NT4G