ON Semiconductor NTD50N03R-035
- Part Number:
- NTD50N03R-035
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2852010-NTD50N03R-035
- Description:
- MOSFET N-CH 25V 7.8A IPAK
- Datasheet:
- NTD50N03R-035
ON Semiconductor NTD50N03R-035 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD50N03R-035.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC25V
- TechnologyMOSFET (Metal Oxide)
- Current Rating45A
- Power Dissipation-Max1.5W Ta 50W Tc
- Element ConfigurationSingle
- Power Dissipation1.5W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs12m Ω @ 30A, 11.5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 12V
- Current - Continuous Drain (Id) @ 25°C7.8A Ta 45A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 11.5V
- Rise Time84ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- Fall Time (Typ)84 ns
- Turn-Off Delay Time11.2 ns
- Continuous Drain Current (ID)45A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage25V
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTD50N03R-035 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 750pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 45A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.It is [11.2 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 11.5V).
NTD50N03R-035 Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 11.2 ns
NTD50N03R-035 Applications
There are a lot of ON Semiconductor
NTD50N03R-035 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 750pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 45A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.It is [11.2 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 11.5V).
NTD50N03R-035 Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 11.2 ns
NTD50N03R-035 Applications
There are a lot of ON Semiconductor
NTD50N03R-035 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NTD50N03R-035 More Descriptions
MOSFETs- Power and Small Signal 25V 45A N-Channel No-Cancel/No-Return
MOSFET N-CH 25V 7.8A/45A IPAK
RES SMD 8.2K OHM 1% 1/4W 1206
MOSFET N-CH 25V 7.8A/45A IPAK
RES SMD 8.2K OHM 1% 1/4W 1206
The three parts on the right have similar specifications to NTD50N03R-035.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageLifecycle StatusNumber of PinsECCN CodeResistanceSubcategoryTurn On Delay TimeHeightLengthWidthRadiation HardeningView Compare
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NTD50N03R-035Through HoleThrough HoleTO-251-3 Stub Leads, IPak-55°C~175°C TJTube2007Obsolete1 (Unlimited)25VMOSFET (Metal Oxide)45A1.5W Ta 50W TcSingle1.5WN-Channel12m Ω @ 30A, 11.5V2V @ 250μA750pF @ 12V7.8A Ta 45A Tc15nC @ 11.5V84ns4.5V 11.5V±20V84 ns11.2 ns45A20V25VNon-RoHS CompliantContains Lead------------------------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTube-Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-71W Tc--N-Channel18m Ω @ 20A, 10V4V @ 250μA1.261pF @ 25V43A Tc23nC @ 10V-10V±20V-----ROHS3 Compliant-NOSILICONe3yes3MATTE TINSINGLETHROUGH-HOLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING60V38A0.018Ohm137A60V36 mJ-----------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)-Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-71W Tc--N-Channel18mOhm @ 20A, 10V4V @ 250μA1.261pF @ 25V43A Tc23nC @ 10V-10V±20V-----ROHS3 Compliant-------------------60V-----DPAK----------
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-Through HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTube2010Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-71W TcSingle52WN-Channel16m Ω @ 20A, 10V2V @ 250μA1400pF @ 25V46A Tc29nC @ 10V12.4ns4.5V 10V±20V4.4 ns26 ns46A20V60VRoHS CompliantLead FreeNOSILICONe3yes3Tin (Sn)----4R-PSIP-T3-1-ENHANCEMENT MODEDRAINSWITCHING-----36 mJ-LAST SHIPMENTS (Last Updated: 1 day ago)4EAR9916MOhmFET General Purpose Power8.4 ns7.62mm6.73mm2.38mmNo
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