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IRLR3110ZTRPBF

Infineon Technologies IRLR3110ZTRPBF

Part Number:
IRLR3110ZTRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2848740-IRLR3110ZTRPBF
Description:
MOSFET N-CH 100V 42A DPAK
ECAD Model:
Datasheet:
IRLR3110ZTRPBF

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Specifications
Infineon Technologies IRLR3110ZTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3110ZTRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    14MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    140W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    140W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    24 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 38A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3980pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    42A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 4.5V
  • Rise Time
    110ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    48 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    42A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    250A
  • Max Junction Temperature (Tj)
    175°C
  • Height
    2.52mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLR3110ZTRPBF Description Specifically designed for Industrial applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine  to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.

IRLR3110ZTRPBF Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
IRLR3110ZTRPBF More Descriptions
TAPE AND REEL / MOSFET, 100V, 63A, 14 mOhm, 34 nC Qg, Logic Level, D-Pak
Single N-Channel 100 V 16 mOhm 48 nC HEXFET® Power Mosfet - TO-252AA
MOSFET, N-CH, 100V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po
Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to IRLR3110ZTRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Surface Mount
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    Input Capacitance
    Rds On Max
    View Compare
  • IRLR3110ZTRPBF
    IRLR3110ZTRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2009
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    14MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    1
    140W Tc
    ENHANCEMENT MODE
    140W
    DRAIN
    24 ns
    N-Channel
    SWITCHING
    14m Ω @ 38A, 10V
    2.5V @ 100μA
    3980pF @ 25V
    42A Tc
    48nC @ 4.5V
    110ns
    4.5V 10V
    ±16V
    48 ns
    33 ns
    42A
    TO-252AA
    16V
    100V
    250A
    175°C
    2.52mm
    6.7056mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3105PBF
    IRLR3105PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    37mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    -
    57W Tc
    ENHANCEMENT MODE
    57W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    57ns
    5V 10V
    ±16V
    37 ns
    25 ns
    25A
    TO-252AA
    16V
    55V
    -
    -
    2.39mm
    6.73mm
    6.223mm
    No
    ROHS3 Compliant
    Lead Free
    55V
    25A
    Single
    3V
    55V
    3 V
    No SVHC
    -
    -
    -
    -
    -
    -
    IRLR3110ZTRPBF vs IRLR3105PBF
  • IRLR014NTRR
    IRLR014NTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    Single
    -
    28W Tc
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    -
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    YES
    55V
    10A
    -
    -
    -
    IRLR3110ZTRPBF vs IRLR014NTRR
  • IRLR024TRR
    IRLR024TRR
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    1997
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 42W Tc
    -
    -
    -
    -
    N-Channel
    -
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    -
    4V 5V
    ±10V
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    D-Pak
    870pF
    100 mΩ
    IRLR3110ZTRPBF vs IRLR024TRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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