Infineon Technologies IRL3716PBF

Name: IRL3716PBF
Brand: Infineon Technologies
SKU: 3554698-IRL3716PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3716PBF

Manufacturer:: Infineon Technologies

Ventron No:: 3554698-IRL3716PBF

Description:: MOSFET N-CH 20V 180A TO-220AB

ECAD Model:

Datasheet:: IRL3716(S,L)PbF

Specifications

Infineon Technologies IRL3716PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3716PBF.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
4Ohm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Current Rating
180A
Power Dissipation-Max
210W Tc
Element Configuration
Single
Power Dissipation
210W
Turn On Delay Time
18 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5090pF @ 10V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
79nC @ 4.5V
Rise Time
140ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
36 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
180A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Input Capacitance
5.09nF
Drain to Source Resistance
4.8mOhm
Rds On Max
4 mΩ
Nominal Vgs
3 V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IRL3716PBF Overview
The maximum input capacitance of this device is 5090pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 180A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 4.8mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRL3716PBF Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 4.8mOhm
a threshold voltage of 3V
a 20V drain to source voltage (Vdss)

IRL3716PBF Applications
There are a lot of Infineon Technologies
IRL3716PBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRL3716PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 3 Milliohms;ID 180A;TO-220AB;PD 210W;Qg 53nC
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 20V, 180A, 4 MOHM, 53 NC QG, LOGIC LEVEL, TO-220ATrans MOSFET N-CH 20V 180A 3-Pin(3 Tab) TO-220AB
N CH MOSFET, 20V, 180A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:210W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Junction to Case Thermal Resistance A:0.72°C/W; On State resistance @ Vgs = 10V:4ohm; Package / Case:TO-220AB; Power Dissipation Pd:210W; Power Dissipation Pd:210W; Pulse Current Idm:720A; Termination Type:Through Hole; Voltage Vds Typ:20V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

Product Comparison

The three parts on the right have similar specifications to IRL3716PBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

REACH SVHC

RoHS Status

Lead Free

Height

Length

Width

Radiation Hardening

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRL3716PBF

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

4Ohm

175°C

-55°C

20V

MOSFET (Metal Oxide)

180A

210W Tc

Single

210W

18 ns

N-Channel

4mOhm @ 90A, 10V

3V @ 250μA

5090pF @ 10V

180A Tc

79nC @ 4.5V

140ns

20V

4.5V 10V

±20V

36 ns

38 ns

180A

3V

20V

20V

20V

5.09nF

4.8mOhm

4 mΩ

3 V

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3303SPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

175°C

-55°C

30V

MOSFET (Metal Oxide)

38A

3.8W Ta 68W Tc

Single

68W

7.4 ns

N-Channel

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

200ns

30V

4.5V 10V

±16V

36 ns

14 ns

38A

-

16V

30V

-

870pF

40mOhm

26 mΩ

-

-

RoHS Compliant

Lead Free

4.572mm

10.668mm

9.65mm

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3716PBF vs IRL3303SPBF
IRL3202S

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

69W Tc

-

-

-

N-Channel

16m Ω @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

-

20V

4.5V 7V

±10V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

YES

SILICON

e3

2

EAR99

MATTE TIN OVER NICKEL

FET General Purpose Power

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

48A

0.019Ohm

190A

20V

270 mJ

IRL3716PBF vs IRL3202S
IRL3303L

Infineon Technologies

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

TO-262

-55°C~175°C TJ

Tube

HEXFET®

1997

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

3.8W Ta 68W Tc

-

-

-

N-Channel

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

-

30V

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3716PBF vs IRL3303L

Certification

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IRL3716~~(7)~~
IRL371~~(52)~~
IRL37~~(55)~~
IRL3~~(56)~~
IRL~~(58)~~

Part Number	Manufacturers	Description	Stock	Price
IRL3716PBF DISTI #IRL3716PBF	Infineon Technologies AG	MOSFET N-CH 20V 180A TO-220AB RoHS: Compliant	0
IRL3716PBF DISTI #IRL3716PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 20V, RDS(ON) 3 Milli RoHS: Compliant	0	3000 $1.3
IRL3716PBF DISTI #IRL3716PBF	Infineon Technologies AG	MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC RoHS: Compliant	0
IRL3716PBF DISTI #IRL3716PBF	International Rectifier		40
IRL3716PBF DISTI #IRL3716PBF	Infineon Technologies AG	MOSFET, N, 20V, 180A, TO-220 RoHS: Compliant	1106	5 $4.74 25 $3.9 100 $3.16 250 $2.82
IRL3716PBF DISTI #IRL3716PBF	Infineon Technologies AG	MOSFET, N, 20V, 180A, TO-220 RoHS: Compliant	1106	1 $1.05 10 $0.795 100 $0.787 250 $0.779 500 $0.771

Infineon Technologies IRL3716PBF

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