Vishay Siliconix IRFR420TRPBF
- Part Number:
- IRFR420TRPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848683-IRFR420TRPBF
- Description:
- MOSFET N-CH 500V 2.4A DPAK
- Datasheet:
- IRFR420TRPBF
Vishay Siliconix IRFR420TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR420TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance3Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Voltage500V
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Current24A
- Power Dissipation2.5W
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.4A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time8.6ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)2.4A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Input Capacitance360pF
- Drain to Source Resistance3Ohm
- Rds On Max3 Ω
- Nominal Vgs2 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFR420TRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device has a continuous drain current (ID) of [2.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.MOSFETs have 3Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFR420TRPBF Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRFR420TRPBF Applications
There are a lot of Vishay Siliconix
IRFR420TRPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device has a continuous drain current (ID) of [2.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.MOSFETs have 3Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFR420TRPBF Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRFR420TRPBF Applications
There are a lot of Vishay Siliconix
IRFR420TRPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFR420TRPBF More Descriptions
Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)
Trans MOSFET N-CH 500V 2.4A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
French Electronic Distributor since 1988
Trans MOSFET N-CH 500V 2.4A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRFR420TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Voltage - Rated DCCurrent RatingView Compare
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IRFR420TRPBF12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)2010Active1 (Unlimited)3Ohm150°C-55°CMOSFET (Metal Oxide)11500V2.5W Ta 42W TcSingle24A2.5W8 nsN-Channel3Ohm @ 1.4A, 10V4V @ 250μA360pF @ 25V2.4A Tc19nC @ 10V8.6ns500V10V±20V16 ns33 ns2.4A4V20V500V360pF3Ohm3 Ω2 V2.39mm6.73mm6.22mmUnknownNoROHS3 CompliantLead Free------------------------------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----Tape & Reel (TR)2004Discontinued1 (Unlimited)---MOSFET (Metal Oxide)1--45W Tc----N-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-55V10V±20V---------------ROHS3 Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°CSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ--
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)---MOSFET (Metal Oxide)---25W Tc----N-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-50V10V±20V--8.2A------------Non-RoHS Compliant------------------------------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1--86W Tc----N-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V26ns-10V±30V--14A------------Non-RoHS CompliantContains Lead-SILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrier-FET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified-SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA-0.18Ohm56A-130 mJ150V14A
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