IRFR420TRPBF

Vishay Siliconix IRFR420TRPBF

Part Number:
IRFR420TRPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2848683-IRFR420TRPBF
Description:
MOSFET N-CH 500V 2.4A DPAK
ECAD Model:
Datasheet:
IRFR420TRPBF

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Specifications
Vishay Siliconix IRFR420TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR420TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    3Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    500V
  • Power Dissipation-Max
    2.5W Ta 42W Tc
  • Element Configuration
    Single
  • Current
    24A
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    8.6ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    2.4A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    360pF
  • Drain to Source Resistance
    3Ohm
  • Rds On Max
    3 Ω
  • Nominal Vgs
    2 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFR420TRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device has a continuous drain current (ID) of [2.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.MOSFETs have 3Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFR420TRPBF Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)


IRFR420TRPBF Applications
There are a lot of Vishay Siliconix
IRFR420TRPBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFR420TRPBF More Descriptions
Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)
Trans MOSFET N-CH 500V 2.4A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRFR420TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFR420TRPBF
    IRFR420TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    Active
    1 (Unlimited)
    3Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    500V
    2.5W Ta 42W Tc
    Single
    24A
    2.5W
    8 ns
    N-Channel
    3Ohm @ 1.4A, 10V
    4V @ 250μA
    360pF @ 25V
    2.4A Tc
    19nC @ 10V
    8.6ns
    500V
    10V
    ±20V
    16 ns
    33 ns
    2.4A
    4V
    20V
    500V
    360pF
    3Ohm
    3 Ω
    2 V
    2.39mm
    6.73mm
    6.22mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR024NTRRPBF
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -
    Tape & Reel (TR)
    2004
    Discontinued
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    -
    45W Tc
    -
    -
    -
    -
    N-Channel
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    17A
    0.075Ohm
    68A
    55V
    71 mJ
    -
    -
  • IRFR010TRR
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    25W Tc
    -
    -
    -
    -
    N-Channel
    200m Ω @ 4.6A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    50V
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR13N15DTR
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    -
    86W Tc
    -
    -
    -
    -
    N-Channel
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    -
    10V
    ±30V
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    SILICON
    HEXFET®
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    -
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    -
    0.18Ohm
    56A
    -
    130 mJ
    150V
    14A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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