Infineon Technologies IRFR120NTRPBF

Name: IRFR120NTRPBF
Brand: Infineon Technologies
SKU: 2848590-IRFR120NTRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR120NTRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848590-IRFR120NTRPBF

Description:: MOSFET N-CH 100V 9.4A DPAK

ECAD Model:

Datasheet:: IRFR120NTRPBF

Specifications

Infineon Technologies IRFR120NTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR120NTRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1998
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Resistance
210mOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
9.1A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
48W Tc
Element Configuration
Single
Power Dissipation
39W
Turn On Delay Time
4.5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.4A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
23ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
23 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
9.4A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Input Capacitance
330pF
Recovery Time
150 ns
Max Junction Temperature (Tj)
175°C
Drain to Source Resistance
210mOhm
Rds On Max
210 mΩ
Nominal Vgs
4 V
Height
2.52mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFR120NTRPBF Description
IRFR120NTRPBF is a member of the fifth-generation HEXFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Based on these techniques, it is able to provide extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design. As a result, it is extremely efficient and reliable for electronic designers to use in a broad range of applications.

IRFR120NTRPBF Features
Extremely low on-resistance per silicon area Fast switching speed Ruggedized device design Ultralow on-state resistance

IRFR120NTRPBF Applications
Synchronous rectification Uninterruptible power supply High-speed switching

IRFR120NTRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
Single N-Channel 100 V 0.21 Ohm 25nC HEXFET® Power Mosfet - TO-252AA
INTERNATIONAL RECTIFIER IRFR120NTRPBF / MOSFET N-CH 100V 9.4A DPAK ESD IR
Trans MOSFET N-CH 100V 9.4A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 100V 9.4A DPAK
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 100V, 9.4A, D-Pak; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR120NTRPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48

Product Comparison

The three parts on the right have similar specifications to IRFR120NTRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Recovery Time

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
IRFR120NTRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

D-Pak

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Active

1 (Unlimited)

SMD/SMT

210mOhm

175°C

-55°C

100V

MOSFET (Metal Oxide)

9.1A

1

1

48W Tc

Single

39W

4.5 ns

N-Channel

210mOhm @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Tc

25nC @ 10V

23ns

100V

10V

±20V

23 ns

32 ns

9.4A

4V

20V

100V

100V

330pF

150 ns

175°C

210mOhm

210 mΩ

4 V

2.52mm

6.7056mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFR120NCTRLPBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

48W Tc

-

-

-

N-Channel

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Ta

25nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR120NTRPBF vs IRFR120NCTRLPBF
IRFR12N25DCTRRP

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

D-Pak

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

144W Tc

-

-

-

N-Channel

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR120NTRPBF vs IRFR12N25DCTRRP
IRFR13N15DTR

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

Obsolete

1 (Unlimited)

-

-

-

-

150V

MOSFET (Metal Oxide)

14A

1

-

86W Tc

-

-

-

N-Channel

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

26ns

-

10V

±30V

-

-

14A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

SILICON

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-252AA

0.18Ohm

56A

130 mJ

IRFR120NTRPBF vs IRFR13N15DTR