Infineon Technologies IRF1405ZS
- Part Number:
- IRF1405ZS
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492647-IRF1405ZS
- Description:
- MOSFET N-CH 55V 75A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF1405Z(S,L)
Infineon Technologies IRF1405ZS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405ZS.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max230W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.9m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4780pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.0049Ohm
- Pulsed Drain Current-Max (IDM)600A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)420 mJ
- RoHS StatusNon-RoHS Compliant
IRF1405ZS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 420 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4780pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 75A.There is a peak drain current of 600A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1405ZS Features
the avalanche energy rating (Eas) is 420 mJ
based on its rated peak drain current 600A.
a 55V drain to source voltage (Vdss)
IRF1405ZS Applications
There are a lot of Infineon Technologies
IRF1405ZS applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 420 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4780pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 75A.There is a peak drain current of 600A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1405ZS Features
the avalanche energy rating (Eas) is 420 mJ
based on its rated peak drain current 600A.
a 55V drain to source voltage (Vdss)
IRF1405ZS Applications
There are a lot of Infineon Technologies
IRF1405ZS applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRF1405ZS More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 55V 75A D2PAK
CAP CER 39PF 250V C0G/NP0 0805
MOSFET N-CH 55V 75A D2PAK
CAP CER 39PF 250V C0G/NP0 0805
The three parts on the right have similar specifications to IRF1405ZS.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsJESD-609 CodeECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningSupplier Device PackageView Compare
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IRF1405ZSSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®2003Obsolete1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.9m Ω @ 75A, 10V4V @ 250μA4780pF @ 25V75A Tc180nC @ 10V55V10V±20V75A0.0049Ohm600A55V420 mJNon-RoHS Compliant----------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Tape & Reel (TR)HEXFET®2004Discontinued1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITYMOSFET (Metal Oxide)-GULL WING26030R-PSSO-G21-3.8W Ta 160W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-10V±20V----420 mJROHS3 CompliantSurface Mount3e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrier175°C-55°CFET General Purpose PowerSingle3.8W11 ns56ns40 ns45 ns42A20V100V4.826mm10.668mm9.65mmNo-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------200W Tc--N-Channel-12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20V-----Non-RoHS Compliant---------------------D2PAK
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------200W Tc--N-Channel-5.3mOhm @ 101A, 10V4V @ 250μA5.48pF @ 25V131A Tc260nC @ 10V55V10V±20V-----ROHS3 Compliant---------------------D2PAK
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