Applications and Usage of IR2011STRPBF Isolated Gate Driver
27 December 2023
Ⅱ. Introduction to IR2011STRPBF
Ⅲ. Dimensions and package of IR2011STRPBF
Ⅳ. Technical parameters of IR2011STRPBF
Ⅴ. Who produces the IR2011STRPBF?
Ⅵ. Absolute maximum ratings of IR2011STRPBF
Ⅶ. Where is IR2011STRPBF used?
Ⅷ. What are the features of IR2011STRPBF?
Ⅸ. How does the input logic of IR2011STRPBF realize low-voltage operation?
Gate drivers are essentially amplifiers that boost logic signals into high current and high voltage signals with minimal switching losses, enabling fast turn-on and turn-off of MOSFETs or IGBTs. IRS2011STRPBF is a gate driver with high-side and low-side drivers. In this article, we will learn about its parameters and characteristics so that you can better apply it to your projects.
A gate driver is a circuit that converts a controller output signal into high voltage, high current pulses to control the gate of a MOSFET or IGBT. In a MOSFET or IGBT, the gate is responsible for controlling the on and off of the main switch, so the gate driver is crucial to the semiconductor switching circuit. By using gate drivers, we can optimize the performance, reliability, and lifetime of our MOSFET or IGBT.
The IR2011STRPBF is a sophisticated high-speed power MOSFET driver designed for surface-mount applications. Encased in an eight-pin SOIC package, this driver is characterized by rapid rise and fall times of 35ns and 20ns, respectively. Noteworthy is its unique configuration featuring independent high-side and low-side reference output channels, rendering it particularly well-suited for demanding applications such as Class D audio and DC-to-DC converters. The device exhibits a power dissipation of 625mW, reflecting its capability to handle substantial power loads with efficiency. The output drivers are equipped with high pulse current buffer stages strategically designed to minimize the occurrence of driver cross-conduction, thereby ensuring enhanced reliability and performance in various power management scenarios.
Alternatives and equivalents:
• IR2011S
The IR2011STRPBF is available in an 8-pin SOIC package and is also available in 8 PDIP packages. It measures 5 mm in length, 4 mm in width, and 1.5 mm in height.
• Manufacturer: Infineon Technologies
• Length: 5 mm
• Width: 4 mm
• Height: 1.5 mm
• Package / Case: SOIC-8
• Packaging: Tape & Reel (TR)
• Rise Time: 35 ns
• Fall Time: 20 ns
• Power dissipation: 625 mW
• Supply Voltage: 10V ~ 20V
• Operating Temperature: -25°C ~ 125°C
• Number of Outputs: 2 Outputs
• Number of Drivers: 2 Drivers
• Mounting Style: SMD/SMT
• Product Type: Gate Drivers
IR2011STRPBF is manufactured by Infineon. The company was founded in 1999. Its predecessor was the semiconductor department of Siemens Group. The company was split from Siemens Group in 1999 and went public in 2000. Infineon focuses on automotive and industrial power devices, security applications and other fields, provides semiconductor and system solutions, and masters cutting-edge technologies in analog and mixed signal, radio frequency and other fields.
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
IR2011STRPBF is often used in the following fields:
• Motor control
• Refrigerator
• High power buffers
• AC-DC inverters
• Portable navigation devices
• General purpose 3-phase inverter
• Isolated supplies for motor control
• Head-up and head mounted displays
• Power factor correction (PFC) circuits
• Isolated supplies for controller area network (CAN)
1. Dual-channel matching propagation delay: IR2011STRPBF is equipped with a dual-channel matching propagation delay feature, a technological marvel that meticulously synchronizes signals between the two channels, thereby guaranteeing not only seamless signal synchronization but also fostering a robust and stable transmission environment.
2. Voltage up to 200V: The voltage of the driver when fully operational is up to 200V, which can adapt to stable operation in high voltage environments.
3. Dragging CMOS Schmitt trigger input: This design provides a more stable input signal, can reduce the jitter and noise of the input signal, and improve the stability of the system.
4. Input logic compatibility: IR2011STRPBF has 3.3V and 5V input logic compatibility and can adapt to systems with different logic level requirements.
5. Operation is not affected by dV/dt: The floating channel design of IR2011STRPBF allows the driver to maintain stable operation under rapid voltage changes and is not affected by the voltage change rate (dV/dt). This helps reduce transient interference and noise and improves system stability.
The input logic of IR2011STRPBF realizes low-voltage operation mainly relying on its internal circuit design and corresponding driving capabilities. IR2011STRPBF is usually manufactured using CMOS technology, and the internal circuit has a higher level of integration and a lower operating voltage range. By optimizing internal circuit design and component parameters, stable logic functions can be achieved at lower operating voltages. In addition, the IR2011STRPBF also has input logic compatibility and can accommodate 3.3V and 5V logic level requirements. In this way, when the driver operates at a lower power supply voltage, the input logic circuit can still operate normally, thereby achieving low-voltage operation.
Frequently Asked Questions
1. What is the packaging form of IR2011STRPBF?
IR2011STRPBF is available in 8-pin SOIC package.
2. What is the supply voltage of IR2011STRPBF?
The power supply voltage of IR2011STRPBF is usually 10V to 20V.
3. How do I choose a gate driver?
To choose an appropriate gate driver, it is important to consider the balance of robustness, size versus cost, and compatibility with other system components (for example, the microcontroller and power switches).
4. What does a gate driver do?
A gate driver is a power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip or as a discrete module.
