Infineon Technologies IRF1405LPBF
- Part Number:
- IRF1405LPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492762-IRF1405LPBF
- Description:
- MOSFET N-CH 55V 131A TO-262
- Datasheet:
- IRF1405(S,L)PbF
Infineon Technologies IRF1405LPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405LPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Supplier Device PackageTO-262
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Current Rating131A
- Number of Elements1
- Power Dissipation-Max200W Tc
- Power Dissipation200W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5.3mOhm @ 101A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5480pF @ 25V
- Current - Continuous Drain (Id) @ 25°C131A Tc
- Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
- Rise Time190ns
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)110 ns
- Turn-Off Delay Time130 ns
- Continuous Drain Current (ID)131A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Input Capacitance5.48nF
- Drain to Source Resistance5.3mOhm
- Rds On Max5.3 mΩ
- Height9.65mm
- Length10.668mm
- Width4.826mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRF1405LPBF Overview
The maximum input capacitance of this device is 5480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 131A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 130 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 5.3mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF1405LPBF Features
a continuous drain current (ID) of 131A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 130 ns
single MOSFETs transistor is 5.3mOhm
a 55V drain to source voltage (Vdss)
IRF1405LPBF Applications
There are a lot of Infineon Technologies
IRF1405LPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 5480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 131A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 130 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 5.3mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF1405LPBF Features
a continuous drain current (ID) of 131A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 130 ns
single MOSFETs transistor is 5.3mOhm
a 55V drain to source voltage (Vdss)
IRF1405LPBF Applications
There are a lot of Infineon Technologies
IRF1405LPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF1405LPBF More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:131A; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:131A; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF1405LPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF1405LPBFThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3TO-262-55°C~175°C TJTubeHEXFET®2010Obsolete1 (Unlimited)175°C-55°C55VMOSFET (Metal Oxide)131A1200W Tc200W13 nsN-Channel5.3mOhm @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V190ns55V10V±20V110 ns130 ns131A20V55V5.48nF5.3mOhm5.3 mΩ9.65mm10.668mm4.826mmNoRoHS CompliantLead Free------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1200W Tc--N-Channel5.3m Ω @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V-55V10V±20V------------Non-RoHS Compliant-YESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING75A0.0053Ohm680A55V590 mJ
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-13.8W Ta 160W Tc--N-Channel36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-100V10V±20V------------Non-RoHS Compliant-YESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING42A0.036Ohm140A100V420 mJ
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1180W Tc--N-Channel11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V-55V10V±20V------------Non-RoHS Compliant-YESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING75A0.011Ohm290A55V250 mJ
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