Infineon Technologies IRF1404ZSTRLPBF

Name: IRF1404ZSTRLPBF
Brand: Infineon Technologies
SKU: 2849158-IRF1404ZSTRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1404ZSTRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2849158-IRF1404ZSTRLPBF

Description:: MOSFET N-CH 40V 75A D2PAK

ECAD Model:

Datasheet:: IRF1404ZSTRLPBF

Specifications

Infineon Technologies IRF1404ZSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404ZSTRLPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
3.7MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
75A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4340pF @ 25V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Rise Time
110ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
58 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
190A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Recovery Time
42 ns
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IRF1404ZSTRLPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4340pF @ 25V.This device has a continuous drain current (ID) of [190A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

IRF1404ZSTRLPBF Features
a continuous drain current (ID) of 190A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
a threshold voltage of 4V

IRF1404ZSTRLPBF Applications
There are a lot of Infineon Technologies
IRF1404ZSTRLPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF1404ZSTRLPBF More Descriptions

In a Pack of 5, N-Channel MOSFET, 190 A, 40 V, 3-Pin D2PAK Infineon IRF1404ZSPBF
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single N-Channel 40V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 40V 190A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:190A; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF1404ZSTRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRF1404ZSTRLPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2003

e3

Active

1 (Unlimited)

2

EAR99

3.7MOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

40V

MOSFET (Metal Oxide)

GULL WING

260

75A

30

R-PSSO-G2

1

200W Tc

Single

ENHANCEMENT MODE

200W

DRAIN

18 ns

N-Channel

SWITCHING

3.7m Ω @ 75A, 10V

4V @ 150μA

4340pF @ 25V

180A Tc

150nC @ 10V

110ns

10V

±20V

58 ns

36 ns

190A

4V

20V

40V

42 ns

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-
IRF1010ESTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

200W Tc

-

-

-

-

-

N-Channel

-

12mOhm @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

D2PAK

60V

-

-

-

-

-

-

-

-

-

IRF1404ZSTRLPBF vs IRF1010ESTRR
IRF1310NSTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

R-PSSO-G2

1

3.8W Ta 160W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

100V

YES

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

42A

0.036Ohm

140A

100V

420 mJ

IRF1404ZSTRLPBF vs IRF1310NSTRR
IRF1405SPBF

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

200W Tc

-

-

-

-

-

N-Channel

-

5.3mOhm @ 101A, 10V

4V @ 250μA

5.48pF @ 25V

131A Tc

260nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

D2PAK

55V

-

-

-

-

-

-

-

-

-

IRF1404ZSTRLPBF vs IRF1405SPBF

Certification

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IRF1404ZSTRLPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(2 Tab) D2PAK T	800	800 $1.1338
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 180A D2PAK RoHS: Compliant	5091	1 $2.28 10 $2.062 100 $1.657
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 180A D2PAK RoHS: Compliant	5091	1 $2.28 10 $2.062 100 $1.657
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 180A D2PAK RoHS: Compliant	4800	800 $1.1297
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	800	800 $1.27
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 190A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	2400	800 $0.8069 1600 $0.7789 3200 $0.7509 4800 $0.7259 8000 $0.7239
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 190A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	3200 $0.7489 4800 $0.7219 8000 $0.6959 16000 $0.6719 32000 $0.6599
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 40V, 120A, TO-263-3, Transistor Pol	5454	1 $1.92 10 $1.63 25 $1.52 50 $1.41 100 $1.3 250 $1.22 500 $1.14
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, 40V, 190A, 3.7 MOHM, 100 NC QG, D2-PA RoHS: Compliant	0	3200 $1.36
IRF1404ZSTRLPBF DISTI #	International Rectifier	RoHS: Not Compliant	1600	1 $0.99 25 $0.92 100 $0.88 500 $0.85 1000 $0.8
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg RoHS: Compliant	4697	1 $1.92 10 $1.63 100 $1.3 500 $1.14 800 $0.943 2400 $0.878 4800 $0.846
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	N-Ch 40V 120A 200W 0,0037R DPak RoHS: Compliant	1030	10 $0.8855 50 $0.7655 200 $0.7055 500 $0.6795
IRF1404ZSTRLPBF DISTI #	International Rectifier	INSTOCK	71326
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 40V, 120A, TO-263-3 RoHS: Compliant	5454	5 $3.57 25 $3.11 100 $2.54 250 $2.14 500 $1.85 1000 $1.75 5000 $1.66
IRF1404ZSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 40V, 120A, TO-263-3 RoHS: Compliant	6254	1 $1.67 10 $1.28 100 $0.998 250 $0.86 500 $0.721
IRF1404ZSTRLPBF DISTI #	INFINEON/IR	D2-PAK (TO-263) RoHS: Compliant	1728	800 $0.9429 1728 $0.88

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Infineon Technologies IRF1404ZSTRLPBF

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