IRF1010ZSTRRPBF

Infineon Technologies IRF1010ZSTRRPBF

Part Number:
IRF1010ZSTRRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2493141-IRF1010ZSTRRPBF
Description:
MOSFET N-CH 55V 75A D2PAK
ECAD Model:
Datasheet:
IRF1010ZSTRRPBF

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Specifications
Infineon Technologies IRF1010ZSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010ZSTRRPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    7.5MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    140W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    140W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2840pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    95nC @ 10V
  • Rise Time
    150ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    92 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    75A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF1010ZSTRRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2840pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

IRF1010ZSTRRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns


IRF1010ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1010ZSTRRPBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF1010ZSTRRPBF More Descriptions
Trans MOSFET N-CH 55V 94A 3-Pin(2 Tab) D2PAK T/R
RF Bipolar Transistors MOSFET 55V SINGLE N-CH HEXFET PWR MOSFET
MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, D2-PAK
Product Comparison
The three parts on the right have similar specifications to IRF1010ZSTRRPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRF1010ZSTRRPBF
    IRF1010ZSTRRPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    7.5MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    140W Tc
    ENHANCEMENT MODE
    140W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    7.5m Ω @ 75A, 10V
    4V @ 250μA
    2840pF @ 25V
    75A Tc
    95nC @ 10V
    150ns
    10V
    ±20V
    92 ns
    36 ns
    75A
    20V
    55V
    4.826mm
    10.668mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRRPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    3.8W Ta 160W Tc
    ENHANCEMENT MODE
    3.8W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    56ns
    10V
    ±20V
    40 ns
    45 ns
    42A
    20V
    100V
    4.826mm
    10.668mm
    9.65mm
    No
    ROHS3 Compliant
    -
    175°C
    -55°C
    Single
    420 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1104STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    2.4W Ta 170W Tc
    -
    -
    -
    -
    N-Channel
    -
    9mOhm @ 60A, 10V
    4V @ 250μA
    2900pF @ 25V
    100A Tc
    93nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    D2PAK
    40V
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 160W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    420 mJ
    -
    100V
    YES
    Not Qualified
    42A
    0.036Ohm
    140A
    100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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