Infineon Technologies IRF1010ZSTRRPBF
- Part Number:
- IRF1010ZSTRRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493141-IRF1010ZSTRRPBF
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Datasheet:
- IRF1010ZSTRRPBF
Infineon Technologies IRF1010ZSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010ZSTRRPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance7.5MOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max140W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation140W
- Case ConnectionDRAIN
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Rise Time150ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)92 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)75A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Height4.826mm
- Length10.668mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF1010ZSTRRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2840pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRF1010ZSTRRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1010ZSTRRPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2840pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRF1010ZSTRRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1010ZSTRRPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF1010ZSTRRPBF More Descriptions
Trans MOSFET N-CH 55V 94A 3-Pin(2 Tab) D2PAK T/R
RF Bipolar Transistors MOSFET 55V SINGLE N-CH HEXFET PWR MOSFET
MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, D2-PAK
RF Bipolar Transistors MOSFET 55V SINGLE N-CH HEXFET PWR MOSFET
MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, D2-PAK
The three parts on the right have similar specifications to IRF1010ZSTRRPBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureElement ConfigurationAvalanche Energy Rating (Eas)Supplier Device PackageDrain to Source Voltage (Vdss)Surface MountQualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
-
IRF1010ZSTRRPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1997e3Discontinued1 (Unlimited)2EAR997.5MOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE140W TcENHANCEMENT MODE140WDRAIN18 nsN-ChannelSWITCHING7.5m Ω @ 75A, 10V4V @ 250μA2840pF @ 25V75A Tc95nC @ 10V150ns10V±20V92 ns36 ns75A20V55V4.826mm10.668mm9.65mmNoROHS3 CompliantLead Free-------------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--Tape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)-GULL WING26030R-PSSO-G21-3.8W Ta 160W TcENHANCEMENT MODE3.8WDRAIN11 nsN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V56ns10V±20V40 ns45 ns42A20V100V4.826mm10.668mm9.65mmNoROHS3 Compliant-175°C-55°CSingle420 mJ--------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-------2.4W Ta 170W Tc----N-Channel-9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V-10V±20V---------Non-RoHS Compliant-----D2PAK40V------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE3.8W Ta 160W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-10V±20V---------Non-RoHS Compliant----420 mJ-100VYESNot Qualified42A0.036Ohm140A100V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 September 2023
TL074CN Symbol, Features and Package
Ⅰ. Overview of TL074CNⅡ. 3D Model and symbol of TL074CNⅢ. Footprint of TL074CNⅣ. Technical parametersⅤ. Features of TL074CNⅥ. Application of TL074CNⅦ. Package of TL074CNⅧ. How to optimize the... -
18 September 2023
STM32F103C6T6 Microcontroller:Features, Package and Application
Ⅰ. What is STM32F103C6T6?Ⅱ. 3D Model and pins of STM32F103C6T6Ⅲ. Technical parametersⅣ. Features of STM32F103C6T6Ⅴ. Package of STM32F103C6T6Ⅵ. Application of STM32F103C6T6Ⅶ. Components of the STM32F103C6T6 minimum system boardⅧ.... -
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can... -
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.