Infineon Technologies IRF1010EZ
- Part Number:
- IRF1010EZ
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492672-IRF1010EZ
- Description:
- MOSFET N-CH 60V 75A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF1010EZ
Infineon Technologies IRF1010EZ technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010EZ.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max140W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5m Ω @ 51A, 10V
- Vgs(th) (Max) @ Id4V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2810pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.0085Ohm
- Pulsed Drain Current-Max (IDM)340A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)99 mJ
- RoHS StatusNon-RoHS Compliant
IRF1010EZ Description
The IRF1010EZPBF is a HEXFET? N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make the IRF1010EZPBF an extremely efficient and reliable device for use in a wide variety of applications.
IRF1010EZ Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-free
IRF1010EZ Applications
Automotive
Power Management
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
The IRF1010EZPBF is a HEXFET? N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make the IRF1010EZPBF an extremely efficient and reliable device for use in a wide variety of applications.
IRF1010EZ Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-free
IRF1010EZ Applications
Automotive
Power Management
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
The three parts on the right have similar specifications to IRF1010EZ.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsJESD-609 CodeECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryTerminal FormElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningQualification StatusSupplier Device PackageView Compare
-
IRF1010EZThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeHEXFET®2009Obsolete1 (Unlimited)3AVALANCHE RATED, ULTRA LOW RESISTANCEMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE140W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8.5m Ω @ 51A, 10V4V @ 100μA2810pF @ 25V75A Tc86nC @ 10V60V10V±20VTO-220AB75A0.0085Ohm340A60V99 mJNon-RoHS Compliant------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Tape & Reel (TR)HEXFET®2004Discontinued1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITYMOSFET (Metal Oxide)-26030R-PSSO-G21-3.8W Ta 160W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-10V±20V-----420 mJROHS3 CompliantSurface Mount3e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrier175°C-55°CFET General Purpose PowerGULL WINGSingle3.8W11 ns56ns40 ns45 ns42A20V100V4.826mm10.668mm9.65mmNo--
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEMOSFET (Metal Oxide)SINGLE26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE200W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.3m Ω @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V55V10V±20V-75A0.0053Ohm680A55V590 mJNon-RoHS Compliant--e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrier--FET General Purpose PowerGULL WING-------------Not Qualified-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------200W Tc--N-Channel-12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20V------Non-RoHS Compliant-----------------------D2PAK
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 December 2023
LM358DR Dual Operational Amplifier Characteristics, Applications, LM358DR vs LM358S
Ⅰ. LM358DR descriptionⅡ. Pin configuration of LM358DRⅢ. What are the characteristics of LM358DR?Ⅳ. How to adjust the gain setting of the LM358DR chip?Ⅴ. Schematic diagram of LM358DRⅥ. What... -
26 December 2023
An Overview of BAV99 Switching Diode
Ⅰ. What is a switching diode?Ⅱ. Introduction of BAV99Ⅲ. What are the functions of BAV99 diode?Ⅳ. Typical characteristics of BAV99 diodeⅤ. Technical parameters of BAV99 diodeⅥ. How to... -
27 December 2023
Everything You Need to Know About STM8S003F3P6TR Microcontroller
Ⅰ. Overview of STM8S003F3P6TRⅡ. Structure of STM8S003F3P6TR microcontrollerⅢ. Package of STM8S003F3P6TR microcontrollerⅣ. STM8S003F3P6TR priceⅤ. Advantages and application scenarios of STM8S003F3P6TRⅥ. STM8S003F3P6TR specificationsⅦ. What are the characteristics of STM8S003F3P6TR... -
27 December 2023
Applications and Usage of IR2011STRPBF Isolated Gate Driver
Ⅰ. What is a gate driver?Ⅱ. Introduction to IR2011STRPBFⅢ. Dimensions and package of IR2011STRPBFⅣ. Technical parameters of IR2011STRPBFⅤ. Who produces the IR2011STRPBF?Ⅵ. Absolute maximum ratings of IR2011STRPBFⅦ. Where...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.