Infineon Technologies IRF100B201
- Part Number:
- IRF100B201
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479467-IRF100B201
- Description:
- MOSFET N-CH 100V 192A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF100B201
Infineon Technologies IRF100B201 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF100B201.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®, StrongIRFET™
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max441W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.2m Ω @ 115A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9500pF @ 50V
- Current - Continuous Drain (Id) @ 25°C192A Tc
- Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)192A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF100B201 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9500pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 192A continuous drain current (ID).For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF100B201 Features
a continuous drain current (ID) of 192A
a 100V drain to source voltage (Vdss)
IRF100B201 Applications
There are a lot of Infineon Technologies
IRF100B201 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9500pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 192A continuous drain current (ID).For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF100B201 Features
a continuous drain current (ID) of 192A
a 100V drain to source voltage (Vdss)
IRF100B201 Applications
There are a lot of Infineon Technologies
IRF100B201 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF100B201 More Descriptions
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 192A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N-CH, 100V, 192A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
Power Field-Effect Transistor, 192A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 192 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 100 / Rise Time ns = 97 / Turn-OFF Delay Time ns = 110 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 441
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 192A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N-CH, 100V, 192A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
Power Field-Effect Transistor, 192A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 192 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 100 / Rise Time ns = 97 / Turn-OFF Delay Time ns = 110 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 441
The three parts on the right have similar specifications to IRF100B201.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusLead FreeNumber of PinsJESD-609 CodeNumber of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryTerminal FormJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningSupplier Device PackageSurface MountTransistor Element MaterialTerminal PositionQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IRF100B20112 WeeksThrough HoleThrough HoleTO-220-3-55°C~175°C TJTubeHEXFET®, StrongIRFET™2013Active1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED441W TcN-Channel4.2m Ω @ 115A, 10V4V @ 250μA9500pF @ 50V192A Tc255nC @ 10V100V10V±20V192AROHS3 CompliantLead Free-------------------------------------- -
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-Tape & Reel (TR)HEXFET®2004Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)260303.8W Ta 160W TcN-Channel36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-10V±20V42AROHS3 Compliant-3e32Matte Tin (Sn) - with Nickel (Ni) barrier175°C-55°CAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerGULL WINGR-PSSO-G21SingleENHANCEMENT MODE3.8WDRAIN11 nsSWITCHING56ns40 ns45 ns20V100V420 mJ4.826mm10.668mm9.65mmNo----------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)-MOSFET (Metal Oxide)--2.4W Ta 170W TcN-Channel9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V40V10V±20V-Non-RoHS Compliant----------------------------D2PAK---------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)260303.8W Ta 160W TcN-Channel36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V100V10V±20V-Non-RoHS Compliant--e32Matte Tin (Sn) - with Nickel (Ni) barrier--AVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerGULL WINGR-PSSO-G21-ENHANCEMENT MODE-DRAIN-SWITCHING-----420 mJ-----YESSILICONSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE42A0.036Ohm140A100V
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