Infineon Technologies IPB12CN10N G

IPB12CN10N G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 154 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4320pF @ 50V.The drain current is the maximum continuous current this device can conduct, which is 67A.Pulsed drain current is maximum rated peak drain current 268A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPB12CN10N G Features
the avalanche energy rating (Eas) is 154 mJ
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)


IPB12CN10N G Applications
There are a lot of Infineon Technologies
IPB12CN10N G applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching