Infineon Technologies IPB107N20NA
- Part Number:
- IPB107N20NA
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479015-IPB107N20NA
- Description:
- MOSFET N-CH 200V 88A TO263-3
- ECAD Model:
-
- Datasheet:
- IPB107N20NA
Infineon Technologies IPB107N20NA technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB107N20NA.
- Package / CasePG-TO263-3
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
IPB107N20NA Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB107N20NA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB107N20NA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB107N20NA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB107N20NA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to IPB107N20NA.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusFactory Lead TimeMountMounting TypeNumber of PinsTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Lead FreeAvalanche Energy Rating (Eas)WeightNumber of ChannelsElement ConfigurationThreshold VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightREACH SVHCView Compare
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IPB107N20NAPG-TO263-3Tape & Reel (TR)RoHS Compliant-------------------------------------------------------- -
TO-263-3, D2Pak (2 Leads Tab), TO-263ABTape & Reel (TR)ROHS3 Compliant14 WeeksSurface MountSurface Mount3SILICON-55°C~175°C TJOptiMOS™2008e3Not For New Designs1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE300WDRAIN34 nsN-Channel4.8m Ω @ 100A, 10V4V @ 240μAHalogen Free11570pF @ 25V100A Tc176nC @ 10V17ns10V±20V20 ns60 ns100A20V100V0.0048Ohm400AContains Lead---------
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TO-263-3, D2Pak (2 Leads Tab), TO-263ABTape & Reel (TR)ROHS3 Compliant14 WeeksSurface MountSurface Mount3SILICON-55°C~175°C TJOptiMOS™2006e3Not For New Designs1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE-DRAIN26 nsN-Channel6.8m Ω @ 80A, 10V4V @ 250μAHalogen Free4700pF @ 25V100A Tc200nC @ 10V51ns10V±20V30 ns61 ns100A20V75V0.0068Ohm400AContains Lead810 mJ--------
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TO-263-3, D2Pak (2 Leads Tab), TO-263ABCut Tape (CT)ROHS3 Compliant13 WeeksSurface MountSurface Mount3SILICON-55°C~175°C TJOptiMOS™2013e3Active1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21-300W TcENHANCEMENT MODE300WDRAIN13 nsN-Channel11.7m Ω @ 84A, 10V4V @ 270μAHalogen Free6650pF @ 100V84A Tc87nC @ 10V10ns10V±20V8 ns24 ns84A20V200V--Contains Lead-1.946308g1Single3V200V175°C4.82mmNo SVHC
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