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FDMS8672S

Fairchild/ON Semiconductor FDMS8672S

Part Number:
FDMS8672S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2852160-FDMS8672S
Description:
MOSFET N-CH 30V 17A POWER56
ECAD Model:
Datasheet:
FDMS8672S

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Specifications
Fairchild/ON Semiconductor FDMS8672S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8672S.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Supplier Device Package
    8-PQFN (5x6)
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.5W Ta 50W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.515pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    17A Ta 35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    47nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
FDMS8672S Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.515pF @ 15V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDMS8672S Features
a 30V drain to source voltage (Vdss)


FDMS8672S Applications
There are a lot of Rochester Electronics, LLC
FDMS8672S applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
FDMS8672S More Descriptions
Trans MOSFET N-CH 30V 17A 8-Pin Power 56 T/R
MOSFET, N, SMD, MLP; Transistor type:PowerTrench; Voltage, Vds typ:30V; Current, Id cont:17A; Resistance, Rds on:0.005ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1.5V; Case style:Power 56; Current, Idm pulse:200A; Marking, SMD:FDMS8672S; Pins, No. of:8; Power dissipation:2.5W; Termination Type:SMD; Transistor polarity:N; Voltage, Vds max:30V; Voltage, Vgs th max:3V
The FDMS8672S has been designed to minimize losses inpower conversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance. Thisdevice has the added benefit of an efficient monolithic Schottkybody diode.
Product Comparison
The three parts on the right have similar specifications to FDMS8672S.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Terminal Position
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • FDMS8672S
    FDMS8672S
    Fairchild/ON Semiconductor
    Surface Mount
    8-PowerTDFN
    8-PQFN (5x6)
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta 50W Tc
    N-Channel
    5mOhm @ 17A, 10V
    3V @ 1mA
    2.515pF @ 15V
    17A Ta 35A Tc
    47nC @ 10V
    30V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS7660
    FDMS7660
    Fairchild/ON Semiconductor
    Surface Mount
    8-PowerTDFN
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta 78W Tc
    N-Channel
    2.8m Ω @ 25A, 10V
    3V @ 250μA
    5565pF @ 15V
    25A Ta 42A Tc
    84nC @ 10V
    -
    4.5V 10V
    ±20V
    ROHS3 Compliant
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    Surface Mount
    8
    68.1mg
    SILICON
    2007
    e3
    yes
    5
    EAR99
    2.8MOhm
    Tin (Sn)
    FET General Purpose Power
    DUAL
    R-PDSO-N5
    1
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    17 ns
    SWITCHING
    9ns
    7 ns
    37 ns
    25A
    1.9V
    MO-240AA
    20V
    30V
    1.9 V
    1.05mm
    5mm
    6mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDMS8672S vs FDMS7660
  • FDMS86550
    FDMS86550
    Fairchild/ON Semiconductor
    Surface Mount
    8-PowerTDFN
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.7W Ta 156W Tc
    N-Channel
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    11530pF @ 30V
    32A Ta 155A Tc
    154nC @ 10V
    -
    8V 10V
    ±20V
    ROHS3 Compliant
    ACTIVE (Last Updated: 3 days ago)
    13 Weeks
    Surface Mount
    8
    56.5mg
    SILICON
    2010
    e3
    yes
    5
    EAR99
    -
    -
    FET General Purpose Power
    DUAL
    R-PDSO-N5
    1
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    43 ns
    SWITCHING
    27ns
    11 ns
    42 ns
    155A
    -
    MO-240AA
    20V
    60V
    -
    1.05mm
    5.1mm
    6.25mm
    -
    -
    -
    Tin
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    1
    32A
    320A
    937 mJ
    FDMS8672S vs FDMS86550
  • FDMS86310
    FDMS86310
    Fairchild/ON Semiconductor
    Surface Mount
    8-PowerTDFN
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta 96W Tc
    N-Channel
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    -
    8V 10V
    ±20V
    ROHS3 Compliant
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    8
    68.1mg
    SILICON
    -
    e3
    yes
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    DUAL
    R-PDSO-F5
    1
    Single
    ENHANCEMENT MODE
    96W
    DRAIN
    28 ns
    SWITCHING
    23ns
    9 ns
    35 ns
    17A
    -
    MO-240AA
    20V
    80V
    -
    1.05mm
    5.1mm
    5.85mm
    -
    No
    Lead Free
    -
    FLAT
    -
    -
    -
    -
    50A
    -
    -
    FDMS8672S vs FDMS86310
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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