Fairchild/ON Semiconductor FDMS8670S
- Part Number:
- FDMS8670S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484660-FDMS8670S
- Description:
- MOSFET N-CH 30V 20A POWER56
- Datasheet:
- FDMS8670S
Fairchild/ON Semiconductor FDMS8670S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8670S.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight68.1mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance3.5MOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Current Rating42A
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max2.5W Ta 78W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds4000pF @ 15V
- Current - Continuous Drain (Id) @ 25°C20A Ta 42A Tc
- Gate Charge (Qg) (Max) @ Vgs73nC @ 10V
- Rise Time19ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time37 ns
- Continuous Drain Current (ID)42A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)20A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)200A
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS8670S Description
The FDMS8670S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS8670S Features
Maximum RDS(on) = 3.5mΩ at VGS = 10V, ID = 20A
Maximum RDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
FDMS8670S Applications
This product is general usage and suitable for many different applications.
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
The FDMS8670S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS8670S Features
Maximum RDS(on) = 3.5mΩ at VGS = 10V, ID = 20A
Maximum RDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
FDMS8670S Applications
This product is general usage and suitable for many different applications.
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS8670S More Descriptions
N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
The three parts on the right have similar specifications to FDMS8670S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)REACH SVHCRadiation HardeningRoHS StatusLead FreePublishedJEDEC-95 CodeNominal VgsHeightLengthWidthContact PlatingPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ChannelsAvalanche Energy Rating (Eas)FET FeatureView Compare
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FDMS8670SACTIVE (Last Updated: 4 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR993.5MOhmTin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)DUALFLAT42AR-PDSO-F512.5W Ta 78W TcSingleENHANCEMENT MODE2.5WDRAIN14 nsN-ChannelSWITCHING3.5m Ω @ 20A, 10V3V @ 1mA4000pF @ 15V20A Ta 42A Tc73nC @ 10V19ns4.5V 10V±20V10 ns37 ns42A1.5V20V20A30V200ANo SVHCNoROHS3 CompliantLead Free--------------
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ACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR992.8MOhmTin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)DUAL--R-PDSO-N512.5W Ta 78W TcSingleENHANCEMENT MODE2.5WDRAIN17 nsN-ChannelSWITCHING2.8m Ω @ 25A, 10V3V @ 250μA5565pF @ 15V25A Ta 42A Tc84nC @ 10V9ns4.5V 10V±20V7 ns37 ns25A1.9V20V-30V-No SVHCNoROHS3 CompliantLead Free2007MO-240AA1.9 V1.05mm5mm6mm-------
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ACTIVE (Last Updated: 3 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN856.5mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99--FET General Purpose Power-MOSFET (Metal Oxide)DUALNO LEAD-R-PDSO-N512.7W Ta 156W TcSingleENHANCEMENT MODE-DRAIN43 nsN-ChannelSWITCHING1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns155A-20V32A60V320A--ROHS3 Compliant-2010MO-240AA-1.05mm5.1mm6.25mmTinNOT SPECIFIEDnot_compliantNOT SPECIFIED1937 mJ-
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™e3yesObsolete1 (Unlimited)5EAR99-Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)DUALFLAT-R-PDSO-F513.3W Ta 59W TcSingleENHANCEMENT MODE59WDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60A1.5V12V-25V100ANo SVHCNoRoHS Compliant-2017MO-240AA---------45 mJSchottky Diode (Body)
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