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FDMS86181

Fairchild/ON Semiconductor FDMS86181

Part Number:
FDMS86181
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2486548-FDMS86181
Description:
MOSFET N-CH 100V 44A POWER56
ECAD Model:
Datasheet:
FDMS86181

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Specifications
Fairchild/ON Semiconductor FDMS86181 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86181.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    90mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.2m Ω @ 44A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4125pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    44A Ta 124A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    59nC @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    17A
  • Threshold Voltage
    2V
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0042Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Avalanche Energy Rating (Eas)
    337 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Feedback Cap-Max (Crss)
    40 pF
  • Turn Off Time-Max (toff)
    52ns
  • Turn On Time-Max (ton)
    49ns
  • Height
    1.1mm
  • RoHS Status
    ROHS3 Compliant
Description
FDMS86181 Description
The FDMS86181 MOSFET is manufactured utilizing the PowerTrench? process, which includes Shielded Gate technology. With the best in class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.

FDMS86181 Features
? MOSFETs with Shielded Gates
? At VGS = 10 V, ID = 44 A, max rDS(on) = 4.2 m
? At VGS = 6 V, ID = 22 A, max rDS(on) = 12 m
? Attention Deficit Hyperactivity Disorder
? 50% lower Qrr than other MOSFET manufacturers
? Reduces switching noise and EMI
? MSL1 has a strong packaging design.
? UIL has been tested 100 percent.
? Compliant with RoHS

FDMS86181 Applications
FDMS86181 is intended for general use and can be used in a variety of situations.
FDMS86181 More Descriptions
Transistor MOSFET N-CH 100V 124A 8-Pin Power 56 T/R - Tape and Reel
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
Inductor RF Chip Wirewound 36nH 2% 100MHz 25Q-Factor 260mA 630mOhm DCR 0402 Paper T/R
MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 124A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 125W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: Trench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 124A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Product Comparison
The three parts on the right have similar specifications to FDMS86181.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Feedback Cap-Max (Crss)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Height
    RoHS Status
    Drain to Source Voltage (Vdss)
    Rise Time
    Fall Time (Typ)
    Lead Free
    Contact Plating
    Published
    Subcategory
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Length
    Width
    View Compare
  • FDMS86181
    FDMS86181
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    20 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    260
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    1
    1
    2.5W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    4.2m Ω @ 44A, 10V
    4V @ 250μA
    4125pF @ 50V
    44A Ta 124A Tc
    59nC @ 10V
    6V 10V
    ±20V
    25 ns
    17A
    2V
    MO-240AA
    20V
    0.0042Ohm
    100V
    337 mJ
    150°C
    40 pF
    52ns
    49ns
    1.1mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS8350LET40
    FDMS8350LET40
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    260
    not_compliant
    NOT SPECIFIED
    -
    -
    -
    3.33W Ta 125W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.85m Ω @ 47A, 10V
    3V @ 250μA
    16590pF @ 20V
    49A Ta 300A Tc
    219nC @ 10V
    4.5V 10V
    ±20V
    -
    300A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    40V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDMS86181 vs FDMS8350LET40
  • FDMS86550ET60
    FDMS86550ET60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    260
    not_compliant
    NOT SPECIFIED
    -
    -
    1
    3.3W Ta 187W Tc
    Single
    -
    -
    -
    43 ns
    N-Channel
    -
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    8V 10V
    ±20V
    42 ns
    245A
    -
    -
    20V
    -
    60V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    27ns
    11 ns
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    FDMS86181 vs FDMS86550ET60
  • FDMS86550
    FDMS86550
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-N5
    1
    1
    2.7W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    43 ns
    N-Channel
    SWITCHING
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    11530pF @ 30V
    32A Ta 155A Tc
    154nC @ 10V
    8V 10V
    ±20V
    42 ns
    155A
    -
    MO-240AA
    20V
    -
    60V
    937 mJ
    -
    -
    -
    -
    1.05mm
    ROHS3 Compliant
    -
    27ns
    11 ns
    -
    Tin
    2010
    FET General Purpose Power
    32A
    320A
    5.1mm
    6.25mm
    FDMS86181 vs FDMS86550
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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